ترغب بنشر مسار تعليمي؟ اضغط هنا

Bifurcations and chaos in semiconductor superlattices with a tilted magnetic field

320   0   0.0 ( 0 )
 نشر من قبل Alexander Balanov
 تاريخ النشر 2007
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We study the effects of dissipation on electron transport in a semiconductor superlattice with an applied bias voltage and a magnetic field that is tilted relative to the superlattice axis.In previous work, we showed that although the applied fields are stationary,they act like a THz plane wave, which strongly couples the Bloch and cyclotron motion of electrons within the lowest miniband. As a consequence,the electrons exhibit a unique type of Hamiltonian chaos, which creates an intricate mesh of conduction channels (a stochastic web) in phase space, leading to a large resonant increase in the current flow at critical values of the applied voltage. This phase-space patterning provides a sensitive mechanism for controlling electrical resistance. In this paper, we investigate the effects of dissipation on the electron dynamics by modifying the semiclassical equations of motion to include a linear damping term. We demonstrate that even in the presence of dissipation,deterministic chaos plays an important role in the electron transport process. We identify mechanisms for the onset of chaos and explore the associated sequence of bifurcations in the electron trajectories. When the Bloch and cyclotron frequencies are commensurate, complex multistability phenomena occur in the system. In particular, for fixed values of the control parameters several distinct stable regimes can coexist, each corresponding to different initial conditions. We show that this multistability has clear, experimentally-observable, signatures in the electron transport characteristics.

قيم البحث

اقرأ أيضاً

We present fully quantum-mechanical magnetotransport calculations for short-period lateral superlattices with one-dimensional electrostatic modulation. A non-perturbative treatment of both magnetic field and modulation potential proves to be necessar y to reproduce novel quantum oscillations in the magnetoresistance found in recent experiments in the resistance component parallel to the modulation potential. In addition, we predict oscillations of opposite phase in the component perpendicular to the modulation not yet observed experimentally. We show that the new oscillations originate from the magnetic miniband structure in the regime of overlapping minibands.
305 - K. Korzekwa , C. Gradl , M. Kugler 2013
We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Far aday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce experimentally observed signals.
We examine phenomenon of electromagnetic transparency in semiconductor superlattices (having various miniband dispersion laws) in the presence of multi-frequency periodic and non-periodic electric fields. Effects of induced transparency and spontaneo us generation of static fields are discussed. We paid a special attention on a self-induced electromagnetic transparency and its correlation to dynamic electron localization. Processes and mechanisms of the transparency formation, collapse, and stabilization in the presence of external fields are studied. In particular, we present the numerical results of the time evolution of the superlattice current in an external biharmonic field showing main channels of transparency collapse and its partial stabilization in the case of low electron density superlattices.
Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer. Application of in -plane magnetic field produces a dramatic decrease of the QPMR. This decrease correlates strongly with the reduction of the amplitude of Shubnikov de Haas resistance oscillations due to modification of the electron spectrum via enhanced Zeeman splitting. Surprisingly no quantization of the spectrum is detected when the Zeeman energy exceeds the half of the cyclotron energy suggesting an abrupt transformation of the electron dynamics. Observed angular evolution of QPMR implies strong mixing between spin subbands. Theoretical estimations indicate that in the presence of spin-orbital interaction the elastic impurity scattering provides significant contribution to the spin mixing in GaAs quantum wells at high filling factors.
We report magnetotransport measurements of the critical field behavior of thin Al films deposited onto multiply connected substrates. The substrates were fabricated via a standard electrochemical process that produced a triangular array of 66 nm diam eter holes having a lattice constant of 100 nm. The critical field transition of the Al films was measured near $T_c$ as a function of field orientation relative to the substrate normal. With the field oriented along the normal ($theta=0$), we observe reentrant superconductivity at a characteristic matching field $H_m=0.22,mathrm{T}$, corresponding to one flux quantum per hole. In tilted fields, the position $H^*$ of the reentrance feature increases as $sec(theta)$, but the resistivity traces are somewhat more complex than those of a continuous superconducting film. We show that when the tilt angle is tuned such that $H^*$ is of the order of the upper critical field $H_c$, the entire critical region is dominated by the enhanced dissipation associated with a sub-matching perpendicular component of the applied field. At higher tilt angles a local maximum in the critical field is observed when the perpendicular component of the field is equal to the matching field.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا