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تسجيل مستخدم جديدRoom temperature spin polarized magnetic semiconductor
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Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition technique. The total thickness of the film was about 200 nm. The films show ferromagnetic behavior for temperatures ranging from 4 to $400 ^oK$. The layered film structure was characterized as p-type magnetic semiconductor at $300 ^oK$ with a carrier density of the order of $10^{20} /cm^3$. The undoped pure TiO$_{2-delta}$ film was characterized as an n-type magnetic semiconductor. The hole carriers were excited at the interface between the granular Fe and TiO$_{2-delta}$ layers similar to holes excited in the metal/n-type semiconductor interface commonly observed in Metal-Oxide-Semiconductor (MOS) devices. The holes at the interface were polarized in an applied magnetic field raising the possibility that these granular MOS structures can be utilized for practical spintronic device applications.
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Nano granular metallic iron (Fe) and titanium dioxide (TiO$_{2-delta}$) were co-deposited on (100) lanthanum aluminate (LaAlO$_3$) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. The co-deposition
of Fe and TiO$_2$ resulted in $approx$ 10 nm metallic Fe spherical grains suspended within a TiO$_{2-delta}$ matrix. The films show ferromagnetic behavior with a saturation magnetization of 3100 Gauss at room temperature. Our estimate of the saturation magnetization based on the size and distribution of the Fe spheres agreed well with the measured value. The film composite structure was characterized as p-type magnetic semiconductor at 300 K with a carrier density of the order of $ 10^{22} /{rm cm^3}$. The hole carriers were excited at the interface between the nano granular Fe and TiO$_{2-delta}$ matrix similar to holes excited in the metal/n-type semiconductor interface commonly observed in Metal-Oxide-Semiconductor (MOS) devices. From the large anomalous Hall effect directly observed in these films it follows that the holes at the interface were strongly spin polarized. Structure and magneto transport properties suggested that these PLD films have potential nano spintronics applications.
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