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In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical investigation on the physical aspects of these materials has revealed a whole new range of exciting applications due to wide tunability in electronic and optoelectronic properties. Besides theoretical exploration, these materials have been successfully implemented in electronic and optoelectronic devices with promising results. In this work, we have investigated the effect of monolayer TMDC materials and monolayer TMDC alloys on the performance of a promising electronic device that can achieve steep switching characteristics- thin Tunneling Filed Effect Transistor or thin-TFET, using self-consistent determination of conduction, valance band levels in the device and a simplified model of interlayer tunneling current that treats scattering semi-classically and incorporates the energy broadening effect using a Gaussian approximation. We have also explored the effect of gate dielectric material variation, interlayer material variation on the performance of the device.
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron s
Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semicon
Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal di
Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition metal dichalco
The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence effici