ﻻ يوجد ملخص باللغة العربية
We report on the discovery of a large, room temperature magnetoresistance (MR) effect in polyfluorene sandwich devices in weak magnetic fields. We characterize this effect and discuss its dependence on voltage, temperature, film thickness, electrode materials, and (unintentional) impurity concentration. We usually observed negative MR, but positive MR can also be achieved under high applied electric fields. The MR effect reaches up to 10% at fields of 10mT at room temperature. The effect shows only a weak temperature dependence and is independent of the sign and direction of the magnetic field. We find that the effect is related to the hole current in the devices.
We present an extensive study of a large, room temperature negative magnetoresistance (MR) effect in tris-(8-hydroxyquinoline) aluminum sandwich devices in weak magnetic fields. The effect is similar to that previously discovered in polymer devices.
We have performed magnetoresistance measurements on polyfluorene sandwich devices in weak magnetic fields as a function of applied voltage, device temperature (10K to 300K), film thickness and electrode materials. We observed either negative or posit
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials de
A magnetic spin filter tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these tr
Recent demonstrations of inverted thermal activation of charge mobility in polymer field-effect transistors have excited the interest in transport regimes not limited by thermal barriers. However, rationalization of the limiting factors to access suc