اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدExperimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12
142
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally measured thermal conductivity includes contributions from both carriers and phonons, separating out the phonon contribution has been difficult and is mostly based on estimating the electronic contributions using the Wiedemann-Franz law. In this paper, an experimental method to directly measure electronic contributions to the thermal conductivity is presented and applied to Cu0.01Bi2Te2.7Se0.3, [Cu0.01Bi2Te2.7Se0.3]0.98Ni0.02, and Bi0.88Sb0.12. By measuring the thermal conductivity under magnetic field, electronic contributions to thermal conductivity can be extracted, leading to knowledge of the Lorenz number in thermoelectric materials.
قيم البحث
اقرأ أيضاً
This work deals with the characterisation and modelling of the curing process and its associated volume changes of an epoxy based thermoset resin. Measurements from differential scanning calorimetry (DSC) define the progress of the chemical reaction.
The related thermochemical volume changes are recorded by an especially constructed experimental setup based on Archimedes principle. Information on measuring procedure and data processing are provided. This includes investigations on compensation of environmental influences, long-term stability and resolution. With the aim of simulating the adhesives curing process, constitutive models representing the reaction kinetics and thermochemical volume changes are presented and the model parameters are identified.
We use bulk-sensitive soft X-ray angle-resolved photoemission spectroscopy and investigate bulk electronic structures of Ce monopnictides (CeX; X=P, As, Sb and Bi). By exploiting a paradigmatic study of the band structures as a function of their spin
-orbit coupling (SOC), we draw the topological phase diagram of CeX and unambiguously reveal the topological phase transition from a trivial to a nontrivial regime in going from CeP to CeBi induced by the band inversion. The underlying mechanism of the topological phase transition is elucidated in terms of SOC in concert with their semimetallic band structures. Our comprehensive observations provide a new insight into the band topology hidden in the bulk of solid states.
We analyze the effect of contact resistance on the Lorenz number measurement based on direct electronic thermal conductivity experiments. The contact resistance can significantly limit the experimental measured value when the Lorenz number is enhance
d, but not as much so when it is suppressed, should the Wiedemann-Franz law be violated. The result provides the conditions of the potential false negative error and highlights the importance of improving the contact resistance in studying non-Fermi liquid behavior in thermal transport experiments.
We present a double-resonant Raman mode in few-layer graphene, which is able to probe the number of graphene layers reliably. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes/anti-Stokes process comb
ining a LO and a ZO phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments. The investigation of the out-of-plane ZO phonon for layer number determination is expected to be transferable to other layered materials like boron nitride.
Mn$_2$Au is an important antiferromagnetic (AF) material for spintronics applications. Due to its very high Neel temperature of about 1500 K, some of the basic properties are difficult to explore, such as the AF susceptibility and the exchange consta
nts. Experimental determination of these properties is further complicated in thin films by unavoidable presence of uncompensated and quasiloose spins on antisites and at interfaces. Using x-ray magnetic circular dichroism (XMCD), we have measured the spin and orbital contribution to the susceptibility in the direction perpendicular to the in-plane magnetic moments of a Mn$_2$Au(001) film and in fields up to 8 T. By performing these measurements at a low temperature of 7 K and at room temperature, we were able to separate the loose spin contribution from the susceptibility of AF coupled spins. The value of the AF exchange constant obtained with this method for a 10 nm thick Mn$_2$Au(001) film equals to (24 $pm$ 5) meV.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
