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We develop a master equation approach to study the backaction of quantum point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across the QPC exceeds a threshold value determined by the eigenstate energy difference of the DQD. This derived excitation condition agrees well with experiments on QPC-induced inelastic electron tunneling through a DQD [S. Gustavsson et al., Phys. Rev. Lett. 99, 206804(2007)]. Moreover, we propose a new scheme to generate a pure spin current by the QPC in the absence of a charge current.
We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the charge states
We demonstrate single-electron pumping in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots we move the system around charge triple points and transport exactly one electron or hole pe
We propose to monitor a qubit with a double-dot (DD) resonant-tunneling detector, which can operate at higher temperatures than a single-dot detector. In order to assess the effectiveness of this device, we derive rate equations for the density matri
We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of t
It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the quantum dot.