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It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the quantum dot. It is found that the spin polarization in the left and right dots may be induced spontaneously while the intra-dot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit an charge bias instead of a charge current will be induced in equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.
A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (Q
We develop a master equation approach to study the backaction of quantum point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across the QPC exce
We consider an array of N quantum dot pairs interacting via Coulomb interaction between adjacent dots and hopping inside each pair. We show that at the first order in the ratio of hopping and interaction amplitudes, the array maps in an effective two
We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the charge states
We propose to monitor a qubit with a double-dot (DD) resonant-tunneling detector, which can operate at higher temperatures than a single-dot detector. In order to assess the effectiveness of this device, we derive rate equations for the density matri