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Due to the photo-instability and hysteresis of TiO$_2$ electron transport layer (ETL) in perovskite solar cells (PSCs), novel electron transport materials are highly demanded. Here, we show ideal band alignment between La-doped BaSnO$_3$ (LBSO) and methyl ammonium (MA) lead iodide perovskite (MAPbI$_3$). The CH$_3$NH$_3$PbI$_3$/La$_x$Ba$_{(1-x)}$SnO$_3$ interface forms a stable all-perovskite heterostructure. The selective band alignment is manipulated with band gap renormalization by La-doping on the Ba site. LBSO shows high mobility, photo-stability, and structural stability, promising the next generation ETL materials.
By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mo
The high room temperature mobility and the electron effective mass in BaSnO$_3$ are investigated in depth by evaluation of the free carrier absorption observed in infrared spectra for epitaxial films with free electron concentrations from $8.3 times
Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize th
Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 times 0.4 times 0.2$-mm$^3$ large single crystals of the cubic SrGeO
Improvement in the optoelectronic performance of halide perovskite semiconductors requires the identification and suppression of non-radiative carrier trapping processes. The iodine interstitial has been established as a deep level defect, and implic