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تسجيل مستخدم جديدComment: Superconducting transition in Nb nanowires fabricated using focused ion beam
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تأليف
Andreas Engel
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In a recent paper Tettamanzi et al (2009 Nanotechnology bf{20} 465302) describe the fabrication of superconducting Nb nanowires using a focused ion beam. They interpret their conductivity data in the framework of thermal and quantum phase slips below $T_c$. In the following we will argue that their analysis is inappropriate and incomplete, leading to contradictory results. Instead, we propose an interpretation of the data within a SN proximity model.
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Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour
is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below Tc. This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.
In this communication we present our response to the recent comment of A. Engel regarding our paper on FIB- fabricated Nb nanowires (see Vol. 20 (2009) Pag. 465302). After further analysis and additional experimental evidence, we conclude that our in
terpretation of the experimental results in light of QPS theory is still valid when compared with the alternative proximity-based model as proposed by A. Engel.
We have used a neon focused-ion-beam to fabricate both nanoscale Nb Dayem bridges and NbN phase-slip nanowires located at the short-circuited end of quarter-wavelength coplanar waveguide resonators. The Dayem bridge devices show flux-tunability and i
ntrinsic quality factor exceeding 10,000 at 300 mK up to local fields of at least 60 mT. The NbN nanowires show signatures of incoherent quantum tunnelling of flux at 300 mK.
Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrati
ons of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is Jc= 1.5 10^5 A/cm2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.
We have fabricated C-Ga-O nanowires by gallium focused ion beam-induced deposition from the carbon-based precursor phenanthrene. The electrical conductivity of the nanowires is weakly temperature dependent below 300 K, and indicates a transition to a
superconducting state below Tc = 7 K. We have measured the temperature dependence of the upper critical field Hc2(T), and estimate a zero temperature critical field of 8.8 T. The Tc of this material is approximately 40% higher than that of any other direct write nanowire, such as those based on C-W-Ga, expanding the possibility of fabricating direct-write nanostructures that superconduct above liquid helium temperatures
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