اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدTuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO$_3$ interface by electric field
102
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.
قيم البحث
اقرأ أيضاً
We report the angular dependence of magnetoresistance in two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface. We find that this interfacial magnetoresistance exhibits a similar angular dependence to the spin Hall magnetoresistance observed
in ferromagnet/heavy metal bilayers, which has been so far discussed in the framework of bulk spin Hall effect of heavy metal layer. The observed magnetoresistance is in qualitative agreement with theoretical model calculation including both Rashba spin-orbit coupling and exchange interaction. Our result suggests that magnetic interfaces subject to spin-orbit coupling can generate a nonnegligible contribution to the spin Hall magnetoresistance and the interfacial spin-orbit coupling effect is therefore key to the understanding of various spin-orbit-coupling-related phenomena in magnetic/non-magnetic bilayers.
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacita
nce of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.
We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in-situ r
edox reaction between pure metallic Eu deposited at room temperature on the surface of SrTiO3, an innovative bottom-up approach that can be easily generalized to other functional oxides and scaled to applications. Additionally, we find that the resulting EuO capping layer can be tuned from paramagnetic to ferromagnetic, depending on the layer thickness. These results demonstrate that the simple, novel technique of creating 2DESs in oxides by deposition of elementary reducing agents [T. C. Rodel et al., Adv. Mater. 28, 1976 (2016)] can be extended to simultaneously produce an active, e.g. magnetic, capping layer enabling the realization and control of additional functionalities in such oxide-based 2DESs.
We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo ef
fect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization. The carrier density ($sim 2 times 10^{12}$ cm$^{-2}$) and effective mass ($sim 1.7 ~m_e$) estimated from the oscillations suggest that the high-mobility electrons occupy the d$_{xz/yz}$ subbands of Ti:t$_{2g}$ orbital extending deep within the conducting sheet of SrTiO$_3$. Our results demonstrate that the illumination which induces additional carriers at the interface can pave the way to control the Kondo-like scattering and study the quantum transport in the complex oxide heterostructures.
We start by analyzing experimental data of Spinelli [A. Spinelli, M. A. Torija, C. Liu, C. Jan, and C. Leighton, Phys. Rev. B 81, 155110 (2010)] for conductivity of $n$-type bulk crystals of SrTiO$_3$ (STO) with broad electron concentration $n$ range
of $4times 10^{15}$ - $4 times10^{20} $ cm$^{-3}$, at low temperatures. We obtain good fit of the conductivity data, $sigma(n)$, by the Drude formula for $n geq n_c simeq 3 times 10^{16} $ cm$^{-3}$ assuming that used for doping insulating STO bulk crystals are strongly compensated and the total concentration of background charged impurities is $N = 10^{19}$ cm$^{-3}$. At $n< n_c$, the conductivity collapses with decreasing $n$ and the Drude theory fit fails. We argue that this is the metal-insulator transition (MIT) in spite of the very large Bohr radius of hydrogen-like donor state $a_B simeq 700$ nm with which the Mott criterion of MIT for a weakly compensated semiconductor, $na_B^3 simeq 0.02$, predicts $10^{5}$ times smaller $n_c$. We try to explain this discrepancy in the framework of the theory of the percolation MIT in a strongly compensated semiconductor with the same $N=10^{19}$ cm$^{-3}$. In the second part of this paper, we develop the percolation MIT theory for films of strongly compensated semiconductors. We apply this theory to doped STO films with thickness $d leq 130$ nm and calculate the critical MIT concentration $n_c(d)$. We find that, for doped STO films on insulating STO bulk crystals, $n_c(d)$ grows with decreasing $d$. Remarkably, STO films in a low dielectric constant environment have the same $n_c(d)$. This happens due to the Rytova-Keldysh modification of a charge impurity potential which allows a larger number of the film charged impurities to contribute to the random potential.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
