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Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode spectrum is observed when the lowest s - states are filled, we find a rich excitation spectrum for n=3, which reflects the importance of electron-electron interaction in the present, strongly non-parabolic confining potential. From capacitance spectroscopy we find that the electronic shell structure in our dots gives rise to a distinct pattern in the charging energies which strongly deviates from the monotonic behavior of the Coulomb blockade found in mesoscopic or metallic structures.
We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even though the InAs/InP and InAs/GaAs dots have the same dot material, their
We show here the existence of the indirect coupling of electron and magnetic or nuclear ion spins in self-assembled quantum dots mediated by electron-electron interactions. With a single localized spin placed in the center of the dot, only the spins
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots
We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and C
A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $mu$m (around 0.8 eV photon energy) is performed by time-