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Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating quantum transport phenomena and outstanding optical functionalities. In this paper, we report charge sensing experiments in self-assembled quantum dots. We choose two adjacent dots, and fabricate source and drain electrodes on each dot, in which either dot works as a charge sensor for the other target dot. The sensor dot current significantly changes when the number of electrons in the target dot changes by one, demonstrating single-electron charge sensing. We have also demonstrated real-time detection of single-electron tunnelling events. This charge sensing technique will be an important step towards combining efficient electrical readout of single-electron with intriguing quantum transport physics or advanced optical and photonic technologies developed for self-assembled quantum dots.
We report on capacitance-voltage spectroscopy of self-assembled InAs quantum dots under constant illumination. Besides the electronic and excitonic charging peaks in the spectrum reported earlier, we find additional resonances associated with nonequi
We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and C
The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived spin coherence persisting up to 13 ns after spin orientation has been found in the n-
Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy con
The radiative recombination rates of interacting electron-hole pairs in a quantum dot are strongly affected by quantum correlations among electrons and holes in the dot. Recent measurements of the biexciton recombination rate in single self-assembled