ترغب بنشر مسار تعليمي؟ اضغط هنا

Stabilization of amorphous GaN by oxygen

55   0   0.0 ( 0 )
 نشر من قبل Ben Ruck
 تاريخ النشر 2004
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN.



قيم البحث

اقرأ أيضاً

We report on density-functional-based tight-binding (DFTB) simulations of a series of amorphous arsenic sulfide models. In addition to the charged coordination defects previously proposed to exist in chalcogenide glasses, a novel defect pair, [As4]-- [S3]+, consisting of a four-fold coordinated arsenic site in a seesaw configuration and a three-fold coordinated sulfur site in a planar trigonal configuration, was found in several models. The valence-alternation pairs S3+-S1- are converted into [As4]--[S3]+ pairs under HOMO-to-LUMO electronic excitation. This structural transformation is accompanied by a decrease in the size of the HOMO-LUMO band gap, which suggests that such transformations could contribute to photo-darkening in these materials.
Chalcogenide alloys are materials of interest for optical recording and non-volatile memories. We perform ab-initio molecular dynamics simulations aiming at shading light onto the structure of amorphous Ge2Sb2Te5 (GST), the prototypical material in t his class. First principles simulations show that amorphous GST obtained by quenching from the liquid phase displays two types of short range order. One third of Ge atoms are in a tetrahedral environment while the remaining Ge, Sb and Te atoms display a defective octahedral environment, reminiscent of cubic crystalline GST.
118 - Parveen Kumar , K. Shahi 2009
The structural and electrical characterizations of mechanically-milled (MM) amorphous fast ionic conductors (a-FICs), viz. xAgI (100-x)[0.67 Ag_2 O-0.33V_2O_5] (x = 40, 50, 55 and 70) have been reported. The amorphisation is restricted only to the co mpositions which are well within the glass forming region and all samples are found to be highly agglomerated and X-ray amorphous in nature. The frequency dependent ac conductivity, sigma(omega), of the amorphous samples investigated in the frequency range 5Hz -13 MHz and temperature range 100- 350 K shows a dc conductivity regime at low frequencies and a dispersive regime at higher frequencies. The spectra can be described by the Jonscher power law (JPL), simga(omega) = sigma_dc +A(T) omega_n. However, the values sigma_dc (T) and A(T) both show two distinct Arrhenius regions and n (< 1) is found to be temperature dependent, i.e., decreasing with increasing temperature.
In recent years, there has been an intense interest in understanding the microscopic mechanism of thermally induced magnetization switching driven by a femtosecond laser pulse. Most of the effort has been dedicated to periodic crystalline structures while the amorphous counterparts have been less studied. By using a multiscale approach, i.e. first-principles density functional theory combined with atomistic spin dynamics, we report here on the very intricate structural and magnetic nature of amorphous Gd-Fe alloys for a wide range of Gd and Fe atomic concentrations at the nanoscale level. Both structural and dynamical properties of Gd-Fe alloys reported in this work are in good agreement with previous experiments. We calculated the dynamic behavior of homogeneous and inhomogeneous amorphous Gd-Fe alloys and their response under the influence of a femtosecond laser pulse. In the homogeneous sample, the Fe sublattice switches its magnetization before the Gd one. However, the temporal sequence of the switching of the two sublattices is reversed in the inhomogeneous sample. We propose a possible explanation based on a mechanism driven by a combination of the Dzyaloshiskii-Moriya interaction and exchange frustration, modeled by an antiferromagnetic second-neighbour exchange interaction between Gd atoms in the Gd-rich region. We also report on the influence of laser fluence and damping effects in the all-thermal switching.
121 - A.Sarkar , K. Dasgupta , P. Barat 2005
Two sets of amorphous carbon materials prepared at different routes are irradiated with swift (145 MeV) heavy ion (Ne6+). The structural parameters like the size of ordered grains along c and a axis i.e. Lc & La, the average spacing of the crystallog raphic planes (002) i.e. d002 and the fraction of the amorphous phase of the unirradiated and the irradiated samples are estimated by X-ray diffraction technique. The fraction of the amorphous phase is generally found to increase with the irradiation dose for both sets of the samples. The estimated and values are found to be almost unaffected by irradiation. The estimated values of corroborate with the increase of disorder in both sets of the samples with the increasing dose of irradiation. Keywords: X-ray Diffraction, Amorphous Carbon, Irradiation
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا