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Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most prototypical chalcogenide phase change material, Ge2Sb2Te5 has been widely used in optical data storage and non-volatile electric memory due to the fast switching speed and the low energy consumption. However, the basic understanding of the structural dynamics on the atomic scale is still not clear. Using femtosecond electron diffraction and TDDFT-MD simulation, we reveal the photoinduced ultrafast transition of the correlated local structure in the averaged rock-salt phase of Ge2Sb2Te5. The ultrafast suppression of the local Peierls distortions gives rise to a local structure change from the rhombohedral to the cubic geometry within ~ 0.3 ps. Our work provides new microscopic insights into contributions of the correlated local structure to the transient structural and optical responses in phase change materials. Moreover, we stress the significance of femtosecond electron diffraction in revealing the correlated local structure in the subunit cell and the link between the correlated disorder and physical properties in functional materials with complex microstructures.
The prototypical phase change material GeTe shows an enigmatic phase transition at Tc ca. 650 K from rhombohedral (R3m) to cubic (Fm-3m) symmetry. While local probes see little change in bonding, in contrast, average structure probes imply a displaci
Laser-induced nonthermal melting in semiconductors has been studied for several decades, but the melting mechanism is still under debate. Based on real-time time-dependent density functional theory (rt-TDDFT) simulation, we reveal that the rapid nont
Electronic materials properties are determined by the interplay of many competing factors. Electro-magnetic fields strong enough to rival atomic interactions can disturb the balance between kinematic effects due to electrons hopping between lattice s
We demonstrate here a controllable variation in the Casimir force. Changes in the force of up to 20% at separations of ~100 nm between Au and AgInSbTe (AIST) surfaces were achieved upon crystallization of an amorphous sample of AIST. This material is
Chalcogenide phase change materials enable non-volatile, low-latency storage-class memory. They are also being explored for new forms of computing such as neuromorphic and in-memory computing. A key challenge, however, is the temporal drift in the el