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The prototypical phase change material GeTe shows an enigmatic phase transition at Tc ca. 650 K from rhombohedral (R3m) to cubic (Fm-3m) symmetry. While local probes see little change in bonding, in contrast, average structure probes imply a displacive transition. Here we use high energy X-ray scattering to develop a model consistent with both the local and average structure pictures. We detect a correlation length for domains of the R3m structure which shows power law decay upon heating. Unlike a classical soft mode, it saturates at ca. 20 {AA} above Tc. These nanoclusters are too small to be observed by standard diffraction techniques, yet contain the same local motif as the room temperature structure, explaining previous discrepancies. Finally, a careful analysis of the pair distribution functions implies that the 0.6 % negative thermal expansion (NTE) at the R3m -Fm-3m transition is associated with the loss of coherence between these domains.
Oxygen is widely used to tune the performance of chalcogenide phase-change materials in the usage of phase-Change random access memory (PCRAM) which is considered as the most promising next-generation non-volatile memory. However, the microscopic rol
GeTe is a prototypical phase change material of high interest for applications in optical and electronic non-volatile memories. We present an interatomic potential for the bulk phases of GeTe, which is created using a neural network (NN) representati
Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for non-volatile m
We examine the ultrafast optical response of the crystalline and amorphous phases of the phase change material Ge$_2$Sb$_2$Te$_5$ below the phase transformation threshold. Simultaneous measurement of the transmissivity and reflectivity of thin film s