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Electronic materials properties are determined by the interplay of many competing factors. Electro-magnetic fields strong enough to rival atomic interactions can disturb the balance between kinematic effects due to electrons hopping between lattice sites and the Coulomb repulsion between electrons that limits the band formation. This allows for new insights into quantum phases, as well as the time-scales and energies involved in using quantum effects for possible applications. Here we show that 0.2 V/{AA} ultrashort optical fields in the high harmonic generation regime lead to a pronounced transient inter-site charge transfer in NiO, a prototypical correlated electron insulator. Element-specific transient x-ray absorption spectroscopy detects a negligible change in electron correlations of Ni 3d-states. This behaviour is captured by time-dependent density functional theory and points to a speed limit for the dynamical screening of the Coulomb interaction taking place above our experimental 6.9 femtoseconds optical cycle.
The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases (2-DEG). Ho
Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoel
Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most
Angle-resolved photoemission spectroscopy and Auger electron spectroscopy have been applied to study the intercalation process of silver underneath a monolayer of graphite (MG) on Ni(111). The room-temperature deposition of silver on top of MG/Ni(111
We investigate the ultrafast transient absorption spectrum of Bi2Se3 topological insulator. Bi2Se3 single crystal is grown through conventional solid-state reaction routevia self-flux method. The structural properties have been studied in terms of hi