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The surprisingly low current densities required for inducing the insulator to metal transition has made Ca$_2$RuO$_4$ an attractive candidate material for developing novel Mott-based electronics devices. The mechanism underlying the resistive switching, however, remains to be a controversial topic in the field of correlated electron systems. Here we report a four orders of magnitude increase in the current density required for driving Ca$_2$RuO$_4$ out of the insulating state upon decreasing the crystal size. We investigate this unprecedented effect by conducting an extensive size-dependent study of electrical transport in high-purity Ca$_2$RuO$_4$ single crystals. We establish that the size dependence is not a result of Joule heating, by integrating a microscopic platinum thermometer. Our detailed study demonstrates that the universally observed transport characteristics of Ca$_2$RuO$_4$ are a result of a strongly inhomogenous current distribution in the nominally homogeneous crystal.
We have investigated the in-plane uniaxial pressure effect on the antiferromagnetic Mott insulator Ca2RuO4 from resistivity and magnetization measurements. We succeeded in inducing the ferromagnetic metallic phase at lower critical pressure than by h
We study the origin of the temperature-induced Mott transition in Ca2RuO4. As a method we use the local-density approximation+dynamical mean-field theory. We show the following. (i) The Mott transition is driven by the change in structure from long t
We have investigated the dispersion renormalization $Z_{disp}$ in La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) over the wide doping range of $x=0.03-0.30$, for binding energies extending to several hundred meVs. Strong correlation effects conspire in such a way th
Whether or not anomalies in the thermal conductivity from insulating cuprates can be attributed to antiferromagnetic order and magnons in a 2D Mott insulator remains an intriguing open question. To shed light on this issue, we investigate the thermal
The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite temperatures. We fir