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Kondo effect offers an important paradigm to understand strong correlated many-body physics. Although under intensive study, some of important properties of Kondo effect, in systems where both itinerant coupling and localized coupling play significant roles, are still elusive. Here we report evolution and universality of two stage Kondo effect, the simplest form where both couplings are important using single molecule transistor devices incorporating Manganese phthalocyanine molecules. Kondo temperature T* of two-stage Kondo effect evolves linearly against effective interaction of involved two spins. Observed Kondo resonance shows universal quadratic dependence with all adjustable parameters: temperature, magnetic field and biased voltages. The difference in nonequilibrium conductance of two stage Kondo effect to spin 1/2 Kondo effect is also identified. Messages learned in this study fill in directive experimental evidence of evolution of two-stage Kondo resonance near quantum phase transition point, and help in understanding sophisticated molecular electron spectroscopy in strong correlation regime.
We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate dependence o
The concept of the Kondo box describes a single spin, antiferromagnetically coupled to a quantum dot with a finite level spacing. Here, a Kondo box is formed in a carbon nanotube interacting with a localized electron. We investigate the spins of its
We developed a theoretical framework which extends the method of textit{full counting statistics} (FCS) from conventional single channel Kondo screening schemes to multi-channel Kondo paradigm. The developed idea of FCS has been demonstrated consider
We measure the spin splitting in a magnetic field $B$ of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most precise value o
We have used the electromigration technique to fabricate a $rm{C_{{60}}}$ single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT wit