ﻻ يوجد ملخص باللغة العربية
Piezoelectric nanowires are promising materials for sensing, actuation and energy harvesting, due to their enhanced properties at the nanoscale. However, quantitative characterization of piezoelectricity in nanomaterials is challenging due to practical limitations and the onset of additional electromechanical phenomena, such as the triboelectric and piezotronic effects. Here, we present an open-circuit conductive atomic force microscopy (cAFM) methodology for quantitative extraction of the axial piezoelectric coefficients of nanowires. We show, both theoretically and experimentally, that the standard short-circuit cAFM mode is inadequate for piezoelectric characterization of nanowires, and that such measurements are governed by competing mechanisms. We introduce an alternative open-circuit configuration, and employ time-resolved electromechanical measurements, to extract the piezoelectric coefficients. This method was applied to GaAs, an important semiconductor, with relatively low piezoelectric coefficients. The results obtained for GaAs,~0.4-1 pm/V, are in good agreement with existing knowledge and theory. Our method represents a significant advance in understanding the coexistence of different electromechanical effects, and in quantitative piezoelectric nanoscale characterization. The easy implementation will enable better understanding of electromechanics at the nanoscale.
Reliable operation of frequency modulation mode atomic force microscopy (FM-AFM) depends on a clean resonance of an AFM cantilever. It is recognized that the spurious mechanical resonances which originate from various mechanical components in the mic
Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is key to unde
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale pheno
Ultrasound Atomic Force Microscopy (US-AFM) has been used for subsurface imaging of nanostructures. The contact stiffness variations have been suggested as the origin of the image contrast. Therefore, to analyze the image contrast, the local changes
While offering unprecedented resolution of atomic and electronic structure, Scanning Probe Microscopy techniques have found greater challenges in providing reliable electrostatic characterization at the same scale. In this work, we introduce Electros