ﻻ يوجد ملخص باللغة العربية
Gated heterostructures containing bilayer graphene with staggered sublattice potentials are investigated by tight binding model with Rashba spin-orbital coupling and Hubbard interaction. The topological phase diagrams depend on the combinations of substrates and the Hubbard interaction. The presence of the staggered sublattice potential favor the topological phase transition with small Rashba spin-orbital coupling strength. The presence of the Hubbard interaction modified the topological phase boundaries, increasing the minimal spin-orbital coupling strength for topological phase transition. A phase space of topological semi-metal with indirect band gap is identified in the non-interacting systems. For the bilayer graphene with different staggered sublattice potentials in the two layers, the conditions for the zigzag nanoribbons to host edge polarized chiral edge states are discussed. The conditions require moderate or vanishing Rashba spin-orbital coupling strength, as well as proper range of the gate voltage. The conditions for the systems with and without the Hubbard interaction are compared. The edge polarization can be controlled by the gate voltage.
Domain wall in bilayer graphene with Rashba spin-orbital coupling and staggered sublattice potentials, at the interface between two domains with different gated voltages, is studied. Varying type of zero-line modes are identified, including zero-line
The canonical Su-Schrieffer-Heeger (SSH) model is one of the basic geometries that have spurred significant interest in topologically nontrivial bandgap modes with robust properties. Here, we show that the inclusion of suitable third-order Kerr nonli
Precise control over the size and shape of graphene nanostructures allows engineering spin-polarized edge and topological states, representing a novel source of non-conventional $pi$-magnetism with promising applications in quantum spintronics. A pre
We analytically describe the plasmonic edge modes for an interface that involves the twisted bilayer graphene (TBG) or other similar Moire van der Waals heterostructure. For this purpose, we employ a spatially homogeneous, isotropic and frequency-dep
Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns ha