اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدPhotonic light trapping in silicon nanowire arrays: deriving and overcoming the physical limitations
121
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Hexagonally aligned, free-standing silicon nanowire (SiNW) arrays serve as photonic resonators which, as compared to a silicon (Si) thin film, do not only absorb more visible (VIS) and near-infrared (NIR) light, but also show an inherent photonic light concentration that enhances their performance as solar absorbers. Using numerical simulations we show, how light concentration is induced by high optical cross sections of the individual SiNWs but cannot be optimized independently of the SiNW array absorption. While an ideal spatial density exists, for which the SiNW array absorption for VIS and NIR wavelengths reaches a maximum, the spatial correlation of SiNWs in an array suppresses the formation of optical Mie modes responsible for light concentration. We show that different from SiNWs with straight sidewalls, arrays of inverted silicon nanocones (SiNCs) permit to avoid the mode suppression. In fact they give rise to an altered set of photonic modes which is induced by the spatial correlation of SiNCs in the array, and therefore show a higher degree of freedom to independently optimize light absorption and light concentration. Apart from explaining the good light absorbing and concentrating properties of SiNC arrays, the work justifies a revaluation of SiNW arrays as optical absorbers.
قيم البحث
اقرأ أيضاً
We integrate about 100 single Cadmium Selenide semiconductor nanowires in self-standing Silicon Nitride photonic crystal cavities in a single processing run. Room temperature measurements reveal a single narrow emission linewidth, corresponding to a
Q-factor as large as 5000. By varying the structural parameters of the photonic crystal, the peak wavelength is tuned, thereby covering the entire emission spectral range of the active material. A very large spectral range could be covered by heterogeneous integration of different active materials.
While various nanophotonic structures applicable to relatively thin crystalline silicon-based solar cells were proposed to ensure effective light in-coupling and light trapping in the absorber, it is of great importance to evaluate their performance
on the solar module level under realistic irradiation conditions. Here, we analyze the annual energy yield of relatively thin heterojunction (HJT) solar module architectures when optimized anti-reflective and light trapping titanium dioxide (TiO$_2$) nanodisk square arrays are applied on the front and rear cell interfaces. Our numerical study shows that upon reducing crystalline silicon (c-Si) wafer thickness, the relative increase of the annual energy yield can go up to 11.0 %$_text{rel}$ and 43.0 %$_text{rel}$ for mono- and bifacial solar modules, respectively, when compared to the reference modules with flat optimized anti-reflective coatings of HJT solar cells.
We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 mic
ron) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640 Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.
We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into fo
ur distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By optimizing the design of the substrate, these resonant modes can magnify the graphene absorption in infrared wavelength, for efficient modulators, filters, sensors and photodetectors on silicon photonic platforms.
Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conver
sion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
