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تسجيل مستخدم جديدAbsolute rate coefficients for photorecombination of berylliumlike and boronlike silicon ions
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We report measured rate coefficients for electron-ion recombination for Si10+ forming Si9+ and for Si9+ forming Si8+, respectively. The measurements were performed using the electron-ion merged-beams technique at a heavy-ion storage ring. Electron-ion collision energies ranged from 0 to 50 eV for Si9+ and from 0 to 2000 eV for Si10+, thus, extending previous measurements for Si10+ [Orban et al. 2010, Astrophys. J. 721, 1603] to much higher energies. Experimentally derived rate coefficients for the recombination of Si9+ and Si10+ ions in a plasma are presented along with simple parameterizations. These rate coefficients are useful for the modeling of the charge balance of silicon in photoionized plasmas (Si9+ and Si10+) and in collisionally ionized plasmas (Si10+ only). In the corresponding temperature ranges, the experimentally derived rate coefficients agree with the latest corresponding theoretical results within the experimental uncertainties.
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Rate coefficients for photorecombination (PR) and cross sections for electron-impact ionization (EII) of Fe$^{14+}$ forming Fe$^{13+}$ and Fe$^{15+}$, respectively, have been measured by employing the electron-ion merged-beams technique at a heavy-io
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Measuring the photoionization time delay between electrons from different orbitals is one of the most important accomplishments of attosecond science. These measurements are typically done using attosecond pulses to photoionize a target inside a phot
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