ﻻ يوجد ملخص باللغة العربية
We present new experimentally measured and theoretically calculated rate coefficients for the electron-ion recombination of W$^{18+}$([Kr] $4d^{10}$ $4f^{10}$) forming W$^{17+}$. At low electron-ion collision energies, the merged-beam rate coefficient is dominated by strong, mutually overlapping, recombination resonances. In the temperature range where the fractional abundance of W$^{18+}$ is expected to peak in a fusion plasma, the experimentally derived Maxwellian recombination rate coefficient is 5 to 10 times larger than that which is currently recommended for plasma modeling. The complexity of the atomic structure of the open-$4f$-system under study makes the theoretical calculations extremely demanding. Nevertheless, the results of new Breit-Wigner partitioned dielectronic recombination calculations agree reasonably well with the experimental findings. This also gives confidence in the ability of the theory to generate sufficiently accurate atomic data for the plasma modeling of other complex ions.
Rate coefficients for photorecombination (PR) and cross sections for electron-impact ionization (EII) of Fe$^{14+}$ forming Fe$^{13+}$ and Fe$^{15+}$, respectively, have been measured by employing the electron-ion merged-beams technique at a heavy-io
We report measured rate coefficients for electron-ion recombination for Si10+ forming Si9+ and for Si9+ forming Si8+, respectively. The measurements were performed using the electron-ion merged-beams technique at a heavy-ion storage ring. Electron-io
We present a theoretical investigation of dielectronic recombination (DR) of Ar-like ions that sheds new light on the behavior of the rate coefficient at low-temperatures where these ions form in photoionized plasmas. We provide results for the total
Dielectronic recombination (DR) of xenonlike W20+ forming W19+ has been studied experimentally at a heavy-ion storage-ring. A merged-beams method has been employed for obtaining absolute rate coefficients for electron-ion recombination in the collisi
The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6) nl nl dielectronic recombination (DR) reso