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تسجيل مستخدم جديدBand edge noise spectroscopy of a magnetic tunnel junction
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We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions show clear anomalies at specific applied voltages, reflecting electron tunneling to the band edges of the magnetic electrodes. The change in magnitude of these noise anomalies with the magnetic state allows evaluating the degree of spin mixing between the spin polarized bands at the ferromagnet/insulator interface. Our results are in qualitative agreement with numerical calculations.
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We report the first measurement of the emph{dynamical response} of shot noise (measured at frequency $omega$) of a tunnel junction to an ac excitation at frequency $omega_0$. The experiment is performed in the quantum regime, $hbaromegasimhbaromega_0
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collapse onto one single graph when I is plotted as a function of the single scaling variable Vd^{-lambda}, d being varied from a few mm to a few nm, i.e., by about six orders of magnitude. We provide an argument that finds the exponent {lambda} within the singular behavior inherent to the electrostatics of a sharp tip. A simulation of the tunneling barrier for a realistic tip reproduces both the scaling behavior and the small but significant deviations from scaling observed experimentally.
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