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The non-symmetrized current noise is crucial for the analysis of light emission in nanojunctions. The latter represent non-classical photon emitters whose description requires a full quantum approach. It was found experimentally that light emission can occur with a photon energy exceeding the applied dc voltage, which intuitively should be forbidden due to the Pauli principle. This overbias light emission cannot be described by the single-electron physics, but can be explained by two-electron or even three-electron processes, correlated by a local resonant mode in analogy to the well-known dynamical Coulomb blockade (DCB). Here, we obtain the non-symmetrized noise for junctions driven by an arbitrarily shaped periodic voltage. We find that when the junction is driven, the overbias light emission exhibits intriguingly different features compared to the dc case. In addition to kinks at multiples of the bias voltage, side kinks appear at integer multiples of the ac driving frequency. Our work generalizes the DCB theory of light emission to driven tunnel junctions and opens the avenue for engineered quantum light sources, which can be tuned purely by applied voltages.
The transport properties of a simple model for a finite level structure (a molecule or a dot) connected to metal electrodes in an alternating current scanning tunneling microscope (AC-STM) configuration is studied. The finite level structure is assum
We report the first measurement of the emph{dynamical response} of shot noise (measured at frequency $omega$) of a tunnel junction to an ac excitation at frequency $omega_0$. The experiment is performed in the quantum regime, $hbaromegasimhbaromega_0
We theoretically investigate the critical current of a thermally-biased SIS Josephson junction formed by electrodes made by different BCS superconductors. The response of the device is analyzed as a function of the asymmetry parameter, $r=T_{c_1} /T_
We report the first experimental data of the third moment of current fluctuations in a tunnel junction. We show that both in the classical and quantum regimes (low or high frequency as compared to voltage), it is given by $S_{I^3}=e^2I$. We discuss environmental effects in both regimes.
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions show clear a