ﻻ يوجد ملخص باللغة العربية
Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Ideally, an EBIC measurement reflects the spatially resolved quantum efficiency of the device. In this work, a model for EBIC measurements is presented which applies when recombination within the depletion region is substantial. This model is motivated by cross-sectional EBIC experiments on CdS-CdTe photovoltaic cells which show that the maximum efficiency of carrier collection is less than 100 % and varies throughout the depletion region. The model can reproduce experimental results only if the mobility-lifetime product $mutau$ is spatially varying within the depletion region. The reduced collection efficiency is speculated to be related to high-injection effects, and the resulting increased radiative recombination.
Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of electron-hole pa
We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0001) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombin
Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the $p$-$n$ junction depletion regio
Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstr
The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation