اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدStudy of gamma induced defects in Nd doped phosphate glass using UV-Vis spectrophotometer and photophysics beamline on INDUS-1
134
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Nd doped phosphate glasses have been studied before and after gamma irradiation in order to understand the effect of glass composition and radiation induced defects on the optical properties of glasses. UV, Vis absorption and photoluminescence spectra of these glasses are found strongly dependent on the composition of glass matrix, particularly on the ratio of oxygen (O) and neodymium (Nd) concentration obtained from energy dispersive X-ray spectroscopic (EDX) measurement. Gamma irradiation of glass modifies the transmission below 700 nm due to generation of some new absorption bands corresponding to different types of defects. Observations indicate toward possibility of change in the valence state of Nd3+ to Nd2+ and generation of oxygen vacancies in glass matrix. EDX and X-ray photoelectron spectroscopic (XPS) measurements indicate change in the composition of glasses particularly decrease in the relative concentration of oxygen in glass samples after gamma irradiation.
قيم البحث
اقرأ أيضاً
Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectra (XPS) of Nd doped phosphate glasses have been studied before and after gamma irradiation in order to find the behavior of chemical bonds, which decide the structural changes in
the glass samples. IR absorption spectra of these glasses are found dominated mainly by the characteristics phosphate groups, water (OH) present in the glass network as well as on the composition of glass matrix. The effects of gamma irradiation are observed in the form of bond breaking and possible re-arrangement of the bonding in the glass. Energy dispersive X-ray spectroscopy (EDX) and XPS measurements show changes in the relative concentration of elements; particularly decrease in the concentration of oxygen in the glass samples after gamma irradiation, a possible source of oxygen vacancies. The decrease in the asymmetry in O 1s spectra after gamma irradiation indicates towards decrease in the concentration of bridging oxygen as a result of P-O-P bond breaking. Asymmetric profile of Nd 3d5/2peak after gamma irradiation is found to be due to conversion of Nd3+ to Nd2+ in the glass matrix.
Here were report a study of picene nano-cristalline thin films doped with pentacene molecules. The thin films were grown by supersonic molecular beam deposition with a doping concentration that ranges between less than one molecules of pentacene ever
y 104 picene molecules up to about one molecule of pentacene every 102 of picene. Morphology and opto-electronic properties of the films were studied as a function of the concentration of dopants. The optical response of the picene films, characterized by absorption, steady-state and time-resolved photoluminescence measurements, changes dramatically after the doping with pentacene. An efficient energy transfer from the picene host matrix to the pentacene guest molecules was observed giving rise to an intense photoluminescence coming out from pentacene. This efficient mechanism opens the possibility to exploit applications where the excitonic states of the guest component, pentacene, are of major interest such as MASER. The observed mechanism could also serve as prototypical system for the study of the photophysics of host guest systems based on different phenacenes and acenes.
Squaraine dyes (SQs) represent a versatile class of functional molecules with strong absorption and emission features, widely used as near-infrared sensitizers in organic and hybrid photovoltaic devices. In this context, the photodynamics of such mol
ecules has been seen to influence dramatically the efficiency of the photogeneration process. The most accepted interpretation of excited state deactivation in SQs is represented by a trans-cis photoisomerization around a CC double bond of the polymethinic-like bridge, although such scenario does not explain satisfyingly the decay route of SQs dyes in conformational constrained systems or in highly viscous environments. Here we combine steady-state and time-resolved spectroscopic techniques with high level ab initio calculations to shed light into the photophysics of cis-locked indolenine-based SQs. Our results point towards alternative deactivation routes, possibly involving a dark state in molecules lacking central substitution and the rotation of the central substituent in the core-functionalized ones. These novel results can suggest a synthetic rationale to design dyes that permit quantitative and effective charge generation/diffusion and collection in photovoltaic diodes and, thus, enhance their efficiency.
Conversion of spin to charge current was observed in SrTiO3 doped with Nd (Nd:STO), which exhibited a metallic behavior even with low concentration doping. The obvious variation of DC voltages for Py/Nd:STO, obtained by inverting the spin diffusion d
irection, demonstrated that the detected signals contained the contribution from the inverse spin Hall effect (ISHE) induced by the spin dependent scattering from Nd impurities with strong spin-orbit interaction. The DC voltages of the ISHE for Nd:STO were measured at different microwave frequency and power, which revealed that spin currents were successfully injected into doped STO layer by spin pumping. The linear relation between the ISHE resistivity and the resistivity induced by impurities implied that the skew scattering was the dominant contribution in this case, and the spin Hall angle was estimated to be 0.17%. This work demonstrated that extrinsic spin dependent scattering in oxides can be used in spintroics besides that in heavy elements doped metals.
The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while G peak of
graphene on Si/SiO2 and GaAs is positioned at 1580 cm-1 it is down-shifted by ~5 cm-1 for graphene-on-sapphire (GOS) and, in many cases, splits into doublets for graphene-on-glass (GOG) with the central frequency around 1580 cm-1. The obtained results are important for graphene characterization and its proposed graphene applications in electronic devices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
