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Conversion of spin to charge current was observed in SrTiO3 doped with Nd (Nd:STO), which exhibited a metallic behavior even with low concentration doping. The obvious variation of DC voltages for Py/Nd:STO, obtained by inverting the spin diffusion direction, demonstrated that the detected signals contained the contribution from the inverse spin Hall effect (ISHE) induced by the spin dependent scattering from Nd impurities with strong spin-orbit interaction. The DC voltages of the ISHE for Nd:STO were measured at different microwave frequency and power, which revealed that spin currents were successfully injected into doped STO layer by spin pumping. The linear relation between the ISHE resistivity and the resistivity induced by impurities implied that the skew scattering was the dominant contribution in this case, and the spin Hall angle was estimated to be 0.17%. This work demonstrated that extrinsic spin dependent scattering in oxides can be used in spintroics besides that in heavy elements doped metals.
We have measured the inverse spin Hall effect (ISHE) in textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators, antiferroma
High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for su
A Comment on Phys. Rev. Lett. 111, 217204 (2013), Detection of Microwave Spin Pumping Using the Inverse Spin Hall Effect
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current