اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدCrystal growth and electronic properties of a 3D Rashba material, BiTeI, with adjusted carrier concentrations
104
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
3D Rashba materials can be a leading player in spin-related novel phenomena, ranging from the metallic extreme (unconventional superconductivity) to the transport intermediate (spin Hall effects) to the novel insulating variant (3D topological insulating states). As the essential backbone for both fundamental and applied research of such a 3D Rashba material, this study established the growth of sizeable single crystals of a candidate compound BiTeI with adjusted carrier concentrations. Three techniques (standard vertical Bridgman, modified horizontal Bridgman, and vapour transport) were employed, and BiTeI crystals (> 1 * 1 * 0.2 mm3) with fundamentally different electronic states from metallic to insulating were successfully grown by the chosen techniques. The 3D Rashba electronic states, including the Fermi surface topology, for the corresponding carrier concentrations of the obtained BiTeI crystals were revealed by relativistic first-principles calculations.
قيم البحث
اقرأ أيضاً
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cas
es it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material.
The design and synthesis of targeted functional materials have been a long-term goal for material scientists. Although a universal design strategy is difficult to generate for all types of materials, however, it is still helpful for a typical family
of materials to have such design rules. Herein, we incorporated several significant chemical and physical factors regarding magnetism, such as structure type, atom distance, spin-orbit coupling, and successfully synthesized a new rare-earth-free ferromagnet, MnPt5As, for the first time. MnPt5As can be prepared by using high-temperature pellet methods. According to X-ray diffraction results, MnPt5As crystallizes in a tetragonal unit cell with the space group P4/mmm (Pearson symbol tP7). Magnetic measurements on MnPt5As confirm ferromagnetism in this phase with a Curie temperature of ~301 K and a saturated moment of 3.5 uB per formula. Evaluation by applying the Stoner Criterion also indicates that MnPt5As is susceptible to ferromagnetism. Electronic structure calculations using the WIEN2k program with local spin density approximation imply that the spontaneous magnetization of this phase arises primarily from the hybridization of d orbitals on both Mn and Pt atoms. The theoretical assessments are consistent with the experimental results. Moreover, the spin-orbit coupling effects heavily influence on magnetic moments in MnPt5As. MnPt5As is the first high-performance magnetic material in this structure type. The discovery of MnPt5As offers a platform to study the interplay between magnetism and structure.
Polycrystalline Ba4NbIr3O12 has recently been shown to be a promising spin liquid candidate. We report an easy and reliable method to grow millimeter-sized single crystals of this trimer based spin liquid candidate material with the actual stoichiome
try of Ba4Nb0.8Ir3.2O12. The growth of large crystals is achieved using BaCl2 as flux. The crystals show hexagonal plate-like habit with edges up to 3 mm in length. The structure is confirmed by single crystal X-ray diffraction and is found to be the same as of previously reported phase Ba12Nb2.4Ir9.6O36 [Ba4Nb0.8Ir3.2O12], indeed with a mixed occupancy of Nb/Ir at 3a site. The magnetic and calorimetric study on the individual single crystals confirms the possibility of a spin liquid state consistent with a recent report on a polycrystalline sample
The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains
with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity, and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space charge area in typical $p$-$n$ junctions.
We report the observation of Shubnikov-de Haas (SdH) oscillations in single crystals of the Rashba spin-splitting compound BiTeI, from both longitudinal ($R_{xx}(B)$) and Hall ($R_{xy}(B)$) magnetoresistance. Under magnetic field up to 65 T, we resol
ved unambiguously only one frequency $F = 284.3pm 1.3$ T, corresponding to a Fermi momentum $k_{F} = 0.093pm 0.002$AA$^{-1}$.The amplitude of oscillations is strongly suppressed by tilting magnetic field, suggesting a highly two-dimensional Fermi surface. Combining with optical spectroscopy, we show that quantum oscillations may be consistent with a bulk conduction band having a Rashba splitting momentum $k_{R}=0.046pm$AA$^{-1}$.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
