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In disordered metals, electron-electron interactions are the origin of a small correction to the conductivity, the Altshuler-Aronov correction. Here we investigate the Altshuler-Aronov correction of a conductor in which the electron motion is ballistic and chaotic. We consider the case of a double quantum dot, which is the simplest example of a ballistic conductor in which the Altshuler-Aronov correction is nonzero. The fact that the electron motion is ballistic leads to an exponential suppression of the correction if the Ehrenfest time is larger than the mean dwell time or the inverse temperature.
On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTtau /hbar $ $>1$. It is shown that the metallic behaviour of the resistivi
We introduce a non-linear frequency dependent D+1 terminal conductance that characterizes a D dimensional Fermi gas, generalizing the Landauer conductance in D=1. For a ballistic conductor we show that this conductance is quantized and probes the Eul
Electric-field effect control of two-dimensional electron gases (2-DEG) has enabled the exploration of nanoscale electron quantum transport in semiconductors. Beyond these classical materials, transition metal-oxide-based structures have d-electronic
We consider a one-channel coherent conductor with a good transmission embedded into an ohmic environment whose impedance is equal to the quantum of resistance R_q=h/e^2 below the RC frequency. This choice is motivated by the mapping of this problem t
We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case even whe