Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and transition met
al oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferromagnetic (FM)/AFM-based heterostructures can result in unusual magnetic and magnetotransport phenomena. Here, we integrate chemically disordered AFM IrMn3 thin films with coexisting AFM phases into complex exchange coupled MgO(001)/Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures and study the structural, magnetic, and magnetotransport properties in various magnetic field cooling states. In particular, we unveil the impact of rotating the relative orientation of the disordered and reversible AFM moments with respect to the irreversible AFM moments on the magnetic and magnetoresistance properties of the exchange coupled heterostructures. We further found that the persistence of AFM grains with thermally disordered and reversible AFM order is crucial for achieving highly tunable magnetic properties and multi-level magnetoresistance states. We anticipate that the introduced approach and the heterostructure architecture can be utilized in future spintronic devices to manipulate the thermally disordered and reversible AFM order at the nanoscale.
Plasmonic sensing is an established technology for real-time biomedical diagnostics and air-quality monitoring. While intensity and wavelength tracking are the most commonly used interrogation methods for Surface Plasmon Resonance (SPR), several work
s indicate the potential superiority of phase interrogation in detection sensitivity. Here, we theoretically and numerically establish the link between ultra-high sensitivities in phase interrogation SPR sensors and the critical coupling condition. However, reaching this condition requires a technically infeasible angstrom-level precision in the metal layer thickness. We propose a robust solution to overcome this limitation by coupling the SPR with a phase-change material (PCM) thin film. By exploiting the multilevel reconfigurable phase states of PCM, we theoretically demonstrate ultra-high phase sensitivities with a limit of detection as low as $10^{-10}$ refractive index unit (RIU). Such a PCM-assisted SPR sensor platform paves the way for unprecedented sensitivity sensors for the detection of trace amounts of low molecular weight species in biomedical sensing and environmental monitoring.
The growth of connected intelligent devices in the Internet of Things has created a pressing need for real-time processing and understanding of large volumes of analogue data. The difficulty in boosting the computing speed renders digital computing u
nable to meet the demand for processing analogue information that is intrinsically continuous in magnitude and time. By utilizing a continuous data representation in a nanoscale crossbar array, parallel computing can be implemented for the direct processing of analogue information in real time. Here, we propose a scalable massively parallel computing scheme by exploiting a continuous-time data representation and frequency multiplexing in a nanoscale crossbar array. This computing scheme enables the parallel reading of stored data and the one-shot operation of matrix-matrix multiplications in the crossbar array. Furthermore, we achieve the one-shot recognition of 16 letter images based on two physically interconnected crossbar arrays and demonstrate that the processing and modulation of analogue information can be simultaneously performed in a memristive crossbar array.
Main focus of this study is the investigation of thermodynamics phenomena responsible for the High Field Q Slope (HFQS) in SRF cavities by Internal Friction (IF) measurement. Mechanical spectroscopy is, indeed, a well-established technique to study p
recipitate formations in BCC materials and several works on the effects of impurities as N and O on the Snoek peak have been published so far and will be taken as reference to explain the mechanisms behind the observed dissipation effects. Internal Friction measurements were performed in Belgium at IMCE on Nb rectangular shape samples with different RRR values prepared at Fermilab by using Electro Polishing (EP), N-doping and heat treatments in order to reproduce the same conditions during the standard treatments applied on bulk Nb SRF cavities. From IF spectra, the H trapping mechanism by interstitial atoms (N and O and/or vacancies, depending on the purity level, RRR) can be easily recognized leading to results that perfectly corroborate previous findings on Q-disease, HFQS and RRR phenomena.
With the growing demand for massive amounts of data processing transmission and storage it is becoming more challenging to optimize the trade off between high speed and energy consumption in current optoelectronic devices. Heterogeneous material inte
gration into Silicon and Nitride photonics has demonstrated high speed potential but with millimeter to centimeter large footprints. The search for an electro optic modulator that combines high speed with energy efficiency and compactness to enable high component density on chip is yet ongoing. Here we demonstrate a 60 GHz fast (3dB roll off) micrometer compact and 4 fJ per bit efficient Graphene based modulator integrated on Silicon photonics platform. Two dual Graphene layers are capacitively biased into modulating the waveguide modes optical effective index via Pauli blocking mechanism. The electro optic response which is further enhanced by a vertical distributed Bragg reflector cavity thus reducing the drive voltage by about 40 times while preserving an adequate modulation depth (10 dB). Compact efficient and fast modulators enable high photonic chip density and performance with key applications in signal processing sensor platforms and analog and neuromorphic photonic processors.
This paper presents an analytic model of one dimensional magnetostriction. We show how specific assumptions regarding the symmetry of key micromagnetic energies (magnetocrystalline, magnetoelastic, and Zeeman) reduce a general three-dimensional stati
stical mechanics model to a one-dimensional form with an exact solution. We additionally provide a useful form of the analytic equations to help ensure numerical accuracy. Numerical results show that the model maintains accuracy over a large range of applied magnetic fields and stress conditions extending well outside those produced in standard laboratory conditions. A comparison to experimental data is performed for several magnetostrictive materials. The model is shown to accurately predict the behavior of Terfenol-D, while two compositions of Galfenol are modeled with varying accuracy. To conclude we discuss what conditions facilitate the description of materials with cubic crystalline anisotropy as transversely isotropic, to achieve peak model performance.
Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semicon
ductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS2 , WS2 , MoSe2 and WSe2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.
The ability to engineer nonlinear optical processes in all-dielectric nanostructures is both of fundamental interest and highly desirable for high-performance, robust, and miniaturized nonlinear optical devices. Herein, we propose a novel paradigm fo
r the efficient tuning of second-harmonic generation (SHG) process in dielectric nanoantennas by integrating with chalcogenide phase change material. In a design with Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) film sandwiched between the AlGaAs nanoantennas and AlO$_{x}$ substrate, the nonlinear SHG signal from the AlGaAs nanoantennas can be boosted via the resonantly localized field induced by the optically-induced Mie-type resonances, and further modulated by exploiting the GST amorphous-to-crystalline phase change in a non-volatile, multi-level manner. The tuning strategy originates from the modulation of resonant conditions by changes in the refractive index of GST. With a thorough examination of tuning performances for different nanoantenna radii, a maximum modulation depth as high as 540$%$ is numerically demonstrated. This work not only reveals out the potential of GST in optical nonlinearity control, but also provides promising strategy in smart designing tunable and reconfigurable nonlinear optical devices, e.g., light emitters, modulators, and sensors.
The dynamics and stability of continuous-wave and multi-pulse structures are studied theoretically, for a generalized model of passively mode-locked fiber laser with an arbitrary nonlinearity. The model is characterized by a complex Ginzburg-Landau e
quation with saturable nonlinearity of a general form ($I^m/(1+Gamma I)^n$), where $I$ is the field intensity, $m$ and $n$ are two positive real numbers and $Gamma$ is the optical field saturation power. The analysis of fixed-point solutions of the governing equations, reveals an interesting loci of singular points in the amplitude-frequency plane consisting of zero, one or two fixed points depending upon the values of $m$ and $n$. The stability of continuous waves is analyzed within the framework of the modulational-instability theory, results demonstrate a bifurcation in the continuous-wave amplitude growth rate and propagation constant characteristic of multi-periodic wave structures. In the full nonlinear regime these multi-periodic wave structures turn out to be multi-pulse trains, unveiled via numerical simulations of the model nonlinear equation the rich variety of which is highlighted by considering different combinations of values for the pair ($m$,$n$). Results are consistent with previous analyses of the dynamics of multi-pulse structures in several contexts of passively mode-locked lasers with saturable absorber, as well as with predictions about the existence of multi-pulse structures and bound-state solitons in optical fibers with strong optical nonlinearity such as cubic-quintic and saturable nonlinearities.
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most
of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway towards low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.
