First-principle study of bismuth-related oxygen-deficient centers ($=$Bi$cdots$Ge$equiv$, $=$Bi$cdots$Si$equiv$, and $=$Bi$cdots$Bi$=$ oxygen vacancies) in Bi$_2$O$_3$-GeO$_2$, Bi$_2$O$_3$-SiO$_2$, Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$, and Bi$_2$O$_3$-Al$
_2$O$_3$-SiO$_2$ hosts is performed. A comparison of calculated spectral properties of the centers with the experimental data on luminescence emission and excitation spectra suggests that luminescence in the 1.2-1.3 $mu$m and 1.8-3.0 $mu$m ranges in Bi$_2$O$_3$-GeO$_2$ glasses and crystals is likely caused by $=$Bi$cdots$Ge$equiv$ and $=$Bi$cdots$Bi$=$ centers, respectively, and the luminescence near 1.1 $mu$m in Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$ glasses and crystals may be caused by $=$Bi$cdots$Ge$equiv$ center with (AlO$_4$)$^-$ center in the second coordination shell of Ge atom.
Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~$mu$m range with a lifetime about 6~$mu$s is discovered. S
imilar luminescence is also present in optical fibers drawn from these glasses. Arsenic addition to Ge-S glass significantly enhances both its resistance to crystallization and the intensity of the luminescence. Computer modeling of Bi-related centers shows that interstitial Bi$^+$ ions adjacent to negatively charged S vacancies are most likely responsible for the IR luminescence.
Experimental and computer-modeling studies of spectral properties of crystalline AgCl doped with metal bismuth or bismuth chloride are performed. Broad near-IR luminescence band in the 0.8--1.2mkm range with time dependence described by two exponenti
al components corresponding to the lifetimes of 1.5 and 10.3mks is excited mainly by 0.39--0.44mkm radiation. Computer modeling of probable Bi-related centers in AgCl lattice is performed. On the basis of experimental and calculation data a conclusion is drawn that the IR luminescence can be caused by Bi^+ ion centers substituted for Ag^+ ions.
A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth centers sug
gest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi^+ ion in thallium site and a negatively charged chlorine vacancy in the nearest anion site). On the contrary, Bi^+ substitutional ions and Bi_2^+ dimers are most likely responsible for the IR luminescence observed in CsI:Bi.
Experimental and theoretical studies of spectral properties of crystalline TlCl:Bi are performed. Two broad near-infrared luminescence bands with a lifetime about 0.25 ms are observed: a strong band near 1.18 mkm excited by 0.40, 0.45, 0.70 and 0.80
mkm radiation, and a weak band at > 1.5 mkm excited by 0.40 and 0.45 mkm radiation. Computer modeling of Bi-related centers in TlCl lattice suggests that Bi^+__V^-(Cl) center (Bi^+ in Tl site and a negatively charged Cl vacancy in the nearest anion site) is most likely responsible for the IR luminescence.
Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and experimental data.
Absorption spectra of Ni$^{2+}$ ions in 22WO$_3$--78TeO$_2$ tungstate-tellurite glass were studied and Ni$^{2+}$ extinction coefficient spectral dependence was derived in the 450 -- 2700 nm wavelength range. Computer modeling of the glass structure p
roved Ni$^{2+}$ ions to be in trigonal-distorted octahedral environment in the tungstate-tellurite glass. Tanabe-Sugano diagram for such an environment was calculated and good description of the observed spectrum of Ni$^{2+}$ ion was obtained. Basing on both absorption spectral range width and the extinction coefficient, nickel should be considered among the most strongly absorbing impurities in the tellurite glasses.
