A new phenomenological technique for using constant amplitude loading data to predict fatigue life from a variable amplitude strain history is presented. A critical feature of this reversal-by-reversal model is that the damage accumulation is inheren
tly non-linear. The damage for a reversal in the variable amplitude loading history is predicted by approximating that the accumulated damage comes from a constant amplitude loading that has the strain range of the particular variable amplitude reversal. A key feature of this approach is that overloads at the beginning of the strain history have a more substantial impact on the total lifetime than overloads applied toward the end of the cycle life. This technique effectively incorporates the strain history in the damage prediction and has the advantage over other methods in that there are no fitting parameters that require substantial experimental data. The model presented here is validated using experimental variable amplitude fatigue data for three different metals.
Previously observed non-Arrhenius behavior in fast ion conducting glasses [textit{Phys. Rev. Lett.} textbf{76}, 70 (1996)] occurs at temperatures near the glass transition temperature, $T_{g}$, and is attributed to changes in the ion mobility due to
ion trapping mechanisms that diminish the conductivity and result in a decreasing conductivity with increasing temperature. It is intuitive that disorder in glass will also result in a distribution of the activation energies (DAE) for ion conduction, which should increase the conductivity with increasing temperature, yet this has not been identified in the literature. In this paper, a series of high precision ionic conductivity measurements are reported for $0.5{Na}_{2}{S}+0.5[x{GeS}_{2}+(1-x){PS}_{5/2}]$ glasses with compositions ranging from $0 leq x leq 1$. The impact of the cation site disorder on the activation energy is identified and explained using a DAE model. The absence of the non-Arrhenius behavior in other glasses is explained and it is predicted which glasses are expected to accentuate the DAE effect on the ionic conductivity.
The orthorhombic boride crystal family XYB$_{14}$, where X and Y are metal atoms, plays a critical role in a unique class of superhard compounds, yet there have been no studies aimed at understanding the origin of the mechanical strength of this comp
ound. We present here the results from a comprehensive investigation into the fracture strength of the archetypal AlLiB$_{14}$ crystal. First-principles, textit{ab initio}, methods are used to determine the ideal brittle cleavage strength for several high-symmetry orientations. The elastic tensor and the orientation-dependent Youngs modulus are calculated. From these results the lower bound fracture strength of AlLiB$_{14}$ is predicted to be between 29 and 31 GPa, which is near the measured hardness reported in the literature. These results indicate that the intrinsic strength of AlLiB$_{14}$ is limited by the interatomic B--B bonds that span between the B layers.
The perovskite crystal BaTiO3 is modeled using a first-principles based effective Hamiltonian and molecular dynamics simulations are performed to estimate the pyroelectric response. The electrocaloric temperature change, DeltaT, is calculated for dif
ferent temperatures and externally applied electric fields. It is found that it is possible to achieve a large DeltaT, around 5-6 K, for a relatively small electric field gradient, less than 100 kV/cm, if the applied fields have a small absolute magnitude.
The atomic structure, energy of formation, and electronic states of vacancies in H-passivated Ge nanocrystals are studied by density functional theory (DFT) methods. The competition between quantum self-purification and the free surface relaxations i
s investigated. The free surfaces of crystals smaller than 2 nm distort the Jahn-Teller relaxation and enhance the reconstruction bonds. This increases the energy splitting of the quantum states and reduces the energy of formation to as low as 1 eV per defect in the smallest nanocrystals. In crystals larger than 2 nm the observed symmetry of the Jahn-Teller distortion matches the symmetry expected for bulk Ge crystals. Near the nanocrystals surface the vacancy is found to have an energy of formation no larger than 0.5 to 1.4 eV per defect, but a vacancy more than 0.7 nm inside the surface has an energy of formation that is the same as in bulk Ge. No evidence of the self-purification effect is observed; the dominant effect is the free surface relaxations, which allow for the enhanced reconstruction. From the evidence in this paper, it is predicted that for moderate sized Ge nanocrystals a vacancy inside the crystal will behave bulk-like and not interact strongly with the surface, except when it is within 0.7 nm of the surface.
The ideal intrinsic barriers to domain switching in c-phase PbTiO_3 (PTO), PbZrO_3 (PZO), and PbZr_{1-x}Ti_xO_3 (PZT) are investigated via first-principles computational methods. The effects of epitaxial strain on the atomic structure, ferroelectric
response, barrier to coherent domain reversal, domain-wall energy, and barrier to domain-wall translation are studied. It is found that PTO has a larger polarization, but smaller energy barrier to domain reversal, than PZO. Consequentially the idealized coercive field is over two times smaller in PTO than PZO. The Ti--O bond length is more sensitive to strain than the other bonds in the crystals. This results in the polarization and domain-wall energy in PTO having greater sensitivity to strain than in PZO. Two ordered phases of PZT are considered, the rock-salt structure and a (100) PTO/PZO superlattice. In these simple structures we find that the ferroelectric properties do not obey Vergards law, but instead can be approximated as an average over individual 5-atom unit cells.
The structure and properties of vacancies in a 2 nm Si nano-crystal are studied using a real space density functional theory/pseudopotential method. It is observed that a vacancys electronic properties and energy of formation are directly related to
the local symmetry of the vacancy site. The formation energy for vacancies and Frenkel pair are calculated. It is found that both defects have lower energy in smaller crystals. In a 2 nm nano-crystal the energy to form a Frenkel pair is 1.7 eV and the energy to form a vacancy is no larger than 2.3 eV. The energy barrier for vacancy diffusion is examined via a nudged elastic band algorithm.
