Spin-orbit interaction is usefully classified as extrinsic or intrinsic depending on its origin: the potential due to random impurities (extrinsic), or the crystalline potential associated with the band or device structure (intrinsic). In this paper
we will show how by using a SU(2) formulation the two sources of spin-orbit interaction may be described in an elegant and unified way. As a result we obtain a simple description of the interplay of the two types of spin-orbit interaction, and a physically transparent explanation of the vanishing of the d.c. spin Hall conductivity in a Rashba two-dimensional electron gas when spin relaxation is neglected, and its reinstatement when spin relaxation is allowed. Furthermore, we obtain an explicit formula for the transverse spin polarization created by an electric current, which generalizes the standard formula obtained by Edelstein and Aronov and Lyanda-Geller by including extrinsic spin-orbit interaction and spin relaxation.
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit interaction in
a two-dimensional electron gas are present simultaneously. Surprisingly, even when the extrinsic mechanism is the dominant driving force for spin Hall currents, the amplitude of the spin Hall conductivity may be considerably tuned by varying the intrinsic spin-orbit coupling via a gate voltage. Furthermore we provide an explanation of the experimentally observed out-of-plane spin polarization in a (110) GaAs quantum well.
