We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface t
reatment prior to NbTiN deposition to optimize the metal-substrate interface, and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.
We generate and study the entanglement properties of novel states composed of three polarisation-encoded photonic qubits. By varying a single experimental parameter we can coherently move from a fully separable state to a maximally robust W state, wh
ile at all times preserving an optimally robust, symmetric entanglement configuration. We achieve a high fidelity with these configurations experimentally, including the highest reported W state fidelity.
