Atomistic theory of dark excitons in self-assembled quantum dots of reduced symmetry

We use an atomistic model to consider the effect of shape symmetry breaking on the optical properties of self-assembled InAs/GaAs quantum dots. In particular, we investigate the energy level structure and optical activity of the lowest energy excitons in these nanostructures. We compare between quantum dots with two-fold rotational and two reflections (C2v) symmetry and quantum dots in which this symmetry was reduced to one reflection only (Cs) by introducing a facet between the quantum dots and the host material. We show that the symmetry reduction mostly affects the optical activity of the dark exciton. While in symmetric quantum dots, one of the dark exciton eigenstates has a small dipole moment polarized along the symmetry axis (growth direction) of the quantum dot, in non-symmetric ones, the two dark excitons dipole moments are predominantly cross-linearly polarized perpendicular to the growth direction and reveal pronounced polarization anisotropy. Our model calculations agree quantitatively with recently obtained experimental data.

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding approach and perform numerically demanding calculations for half-million atom nanosystems. I demonstrate that the overall confinement in quantum dots is a nontrivial interplay of two key factors: strain effects and the valence band offset. I show that strain effects determine both the peculiar structure of confined hole states of lens type InAs/GaAs quantum dots and the characteristic ,,shell-like structure of confined holes states in commonly considered low-strain lens type InAs/InP quantum dot. I also demonstrate that strain leads to single band-like behavior of hole states of disc type (,,indium flushed) InAs/GaAs and InAs/InP quantum dots. I show how strain and valence band offset affect quantum dot many-body properties: the excitonic fine structure, an important factor for efficient entangled photon pair generation, and the biexciton and charged excitons binding energies