We report here the completion of the electronic structure of the majority of the known stoichiometric inorganic compounds, as listed in the International Crystal Structure Data-base (ICSD). We make a detailed comparison of the electronic structure, c
rystal geometry and chemical bonding of cuprate high temperature superconductors, with the calculated over sixty thousand electronic structures. Based on compelling similarities of the electronic structures in the normal state and a data-filtering technique, we propose that high temperature superconductivity is possible for electron- or hole-doping in a much larger group of materials than previously considered. The indentified materials are composed of over one hundred layered compounds, most which hitherto are untested with respect to their super conducting properties. Of particular interest are the following materials; Ca$_2$(CuBr$_2$O$_2$), K$_2$CoF$_4$, Sr$_2$(MoO$_4$) and Sr$_4$V$_3$O$_{10}$, which are discussed in detail.
Topological insulators [1-6] is a new quantum phase of matter with exotic properties such as dissipationless transport and protection against Anderson localization [7]. These new states of quantum matter could be one of the missing links for the real
ization of quantum computing [8,9] and will probably result in new spintronic or magnetoelectric devices. Moreover, topological insulators will be a strong competitor with graphene in electronic application. Because of these potential application the topological insulator research has literally exploded during the last year. Motivated by the fact that up-to-date only few 3D systems are identified to belong to this new quantum phase [10-18] we have used massive computing in combination with data-mining to search for new strong topological insulators. In this letter we present a number of non-layered compounds that show band inversion at the $Gamma$-point, a clear signal of a strong topological insulator.
We propose a new class of materials, which can be viewed as graphene derivatives involving Group IA or Group VIIA elements, forming what we refer to as graphXene. We show that in several cases large band gaps can be found to open up, whereas in other
cases a semimetallic behavior is found. Formation energies indicate that under ambient conditions, sp$^3$ and mixed sp$^2$/sp$^3$ systems will form. The results presented allow us to propose that by careful tuning of the relative concentration of the adsorbed atoms, it should be possible to tune the band gap of graphXene to take any value between 0 and 6.4 eV.
