Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunnelin
g mode, typically utilizes very slow ($sim!10^2~mathrm{nm^2/s}$) patterning speeds. By contrast, using the STM in a high voltage ($>10~mathrm{V}$) field emission mode, patterning speeds can be increased by orders of magnitude to $gtrsim!10^4~mathrm{nm^2/s}$. We show that the rapid patterning negligibly affects the functionality of relatively large micron-sized features, which act as contacting pads on these devices. For nanoscale structures, we show that the resulting transport is consistent with the donor incorporation chemistry enhancing the device definition to a scale of $10~mathrm{nm}$ even though the pattering spot size is $40~mathrm{nm}$.
This work deals with the characterisation and modelling of the curing process and its associated volume changes of an epoxy based thermoset resin. Measurements from differential scanning calorimetry (DSC) define the progress of the chemical reaction.
The related thermochemical volume changes are recorded by an especially constructed experimental setup based on Archimedes principle. Information on measuring procedure and data processing are provided. This includes investigations on compensation of environmental influences, long-term stability and resolution. With the aim of simulating the adhesives curing process, constitutive models representing the reaction kinetics and thermochemical volume changes are presented and the model parameters are identified.
