Starting from a general equation for organism (or cell system) growth and attributing additional cell death rate (besides the natural rate) to therapy, we derive an equation for cell response to {alpha} radiation. Different from previous models that
are based on statistical theory, the present model connects the consequence of radiation with the growth process of a biosystem and each variable or parameter has meaning regarding the cell evolving process. We apply this equation to model the dose response for {alpha}-particle radiation. It interprets the results of both high and low linear energy transfer (LET) radiations. When LET is high, the additional death rate is a constant, which implies that the localized cells are damaged immediately and the additional death rate is proportional to the number of cells present. While at low LET, the additional death rate includes a constant term and a linear term of radiation dose, implying that the damage to some cell nuclei has a time accumulating effect. This model indicates that the oxygen-enhancement ratio (OER) decreases while LET increases consistently.
A model based on the alternating structure of the imbedded conduction layers (the Cu-O2 planes) with the charge-transfer-insulator (CTI) layers is proposed. There are three kinds of carriers, each with a different behavior: conduction-like holes in t
he Cu-O2 layers and electrons and normal holes in the CTI matrix between the Cu-O2 layers. This structure explains the strong anisotropies. The relationship is obtained between the concentration nq of conduction-like holes in the Cu-O2 layers and the temperature T. The anomalous temperature behavior of the resistivity as well as the Hall constant also follows. We give the hole density in ab plane a definite physical meaning, and also define explicitly optimal doping, overdoping and underdoping. Our model gives the correct temperature dependence of the resistivity and the hole constant on optimal doping, overdoping and underdoping, and it predicts the temperature behavior of the cotangent of the Hall angle quite well. Based on this model, we can also understand that the HiTc materials become Fermi Liquids in the extremely overdoped region, and the dR/dT becomes negative below some temperature T<1.211T0 in the underdoped case. Based on this model, the thermal behaviors of the magnetic susceptibility in different doping can also be easily explained. The resistivity along c-axis is discussed.
