We use the Hirsch-Fye quantum Monte Carlo method to study the single magnetic impurity problem in a two-dimensional electron gas with Rashba spin-orbit coupling. We calculate the spin susceptibility for various values of spin-orbit coupling, Hubbard
interaction, and chemical potential. The Kondo temperatures for different parameters are estimated by fitting the universal curves of spin susceptibility. We find that the Kondo temperature is almost a linear function of Rashba spin-orbit energy when the chemical potential is close to the edge of the conduction band. When the chemical potential is far away from the band edge, the Kondo temperature is independent of the spin-orbit coupling. These results demonstrate that, for single impurity problem in this system, the most important reason to change the Kondo temperature is the divergence of density of states near the band edge, and the divergence is induced by the Rashba spin-orbit coupling.
Two-dimensional (2D) layered tungsten diselenides (WSe2) material has recently drawn a lot of attention due to its unique optoelectronic properties and ambipolar transport behavior. However, direct chemical vapor deposition (CVD) synthesis of 2D WSe2
is not as straightforward as other 2D materials due to the low reactivity between reactants in WSe2 synthesis. In addition, the growth mechanism of WSe2 in such CVD process remains unclear. Here we report the observation of a screw-dislocation-driven (SDD) spiral growth of 2D WSe2 flakes and pyramid-like structures using a sulfur-assisted CVD method. Few-layer and pyramid-like WSe2 flakes instead of monolayer were synthesized by introducing a small amount of sulfur as a reducer to help the selenization of WO3, which is the precursor of tungsten. Clear observations of steps, helical fringes, and herring-bone contours under atomic force microscope characterization reveal the existence of screw dislocations in the as-grown WSe2. The generation and propagation mechanisms of screw dislocations during the growth of WSe2 were discussed. Back-gated field-effect transistors were made on these 2D WSe2 materials, which show on/off current ratios of 106 and mobility up to 44 cm2/Vs.
We apply mean-field theory and Hirsch-Fye quantum Monte Carlo method to study the spin-spin interaction in the bulk of three-dimensional topological insulators. We find that the spin-spin interaction has three different components: the longitudinal,
the transverse and the transverse Dzyaloshinskii-Moriya-like terms. When the Fermi energy is located in the bulk gap of topological insulators, the spin-spin interaction decays exponentially due to Bloembergen-Rowland interaction. The longitudinal correlation is antiferromagnetic and the transverse correlations are ferromagnetic. When the chemical potential is in the conduction or valence band, the spin-spin interaction follows power law decay, and isotropic ferromagnetic interaction dominates in short separation limit.
