Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement
of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 m{Omega} at room temperature. The spin signal dependence with the distance between the ferromagnetic electrodes has been analyzed using both a 1D spin transport model and finite elements method simulations. The enhancement of the spin signal amplitude when using CoFe electrodes can be explained by a higher effective polarization.
The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex
systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes.
We have studied the evolution of the Spin Hall Effect in the regime where the material size responsible for the spin accumulation is either smaller or larger than the spin diffusion length. Lateral spin valve structures with Pt insertions were succes
sfully used to measure the spin absorption efficiency as well as the spin accumulation in Pt induced through the spin Hall effect. Under a constant applied current the results show a decrease of the spin accumulation signal is more pronounced as the Pt thickness exceeds the spin diffusion length. This implies that the spin accumulation originates from bulk scattering inside the Pt wire and the spin diffusion length limits the SHE. We have also analyzed the temperature variation of the spin hall conductivity to identify the dominant scattering mechanism.
