Taken together and viewed holistically, recent theory, low temperature (T) transport, photoelectron spectroscopy and quantum oscillation experiments have built a very strong case that the paradigmatic mixed valence insulator SmB6 is currently unique
as a three-dimensional strongly correlated topological insulator (TI). As such, its many-body T-dependent bulk gap brings an extra richness to the physics beyond that of the weakly correlated TI materials. How will the robust, symmetry-protected TI surface states evolve as the gap closes with increasing T? For SmB6 exploiting this opportunity first requires resolution of other important gap-related issues, its origin, its magnitude, its T-dependence and its role in bulk transport. In this paper we report detailed T-dependent angle resolved photoemission spectroscopy (ARPES) measurements that answer all these questions in a unified way.
Recent renewed interest in the mixed valent insulator SmB6 comes from topological theory predictions and surface transport measurements of possible in-gap surface states whose existence is most directly probed by angle-resolved photoemission spectros
copy (ARPES). Early photoemission leading up to a recent flurry of ARPES studies of in-gap states is reviewed. Conflicting interpretations about the nature of the Sm 4f-5d hybridization gap and observed X-point bands between the f-states and the Fermi level are critically assessed using the important tools of photon polarization and spatial dependence which also provide additional insight into the origin of the more ambiguous {Gamma}-point in-gap states.
