To elucidate an origin of the two energy gaps in the narrow-gap semiconductor FeSb2, we have investigated the effects of hydrostatic pressure on the resistivity, Hall resistance and magnetoresistance at low temperatures. The larger energy gap evaluat
ed from the temperature dependence of resistivity above 100 K is enhanced from 30 to 40 meV with pressure from 0 to 1.8 GPa, as generally observed in conventional semiconductors. In the low-temperature range where a large Seebeck coefficient was observed, we evaluate the smaller energy gap from the magnetotransport tensor using a two-carrier model and find that the smaller gap exhibits a weak pressure dependence in contrast to that of the larger gap. To explain the pressure variations of the energy gaps, we propose a simple model that the smaller gap is a gap from the impurity level to the conduction band and the larger one is a gap between the valence and conduction bands, suggesting that the observed large Seebeck coefficient is not relevant to electron correlation effects.
We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a large Seebec
k coefficient was observed. By applying a two-carrier model, we find that the carrier concentration decreases from 1 down to 10^-4 ppm/unit cell and the mobility increases from 2000 to 28000 cm2/Vs with decreasing temperature from 30 down to 4 K. At lower temperatures, the magnetoresistive behavior drastically changes and a negative magnetoresistance is observed at 3 K. These low-temperature behaviors are reminiscent of the low-temperature magnetotransport observed in doped semiconductors such as As-doped Ge, which is well described by a weak-localization picture. We argue a detailed electronic structure in FeSb2 inferred from our observations.
