Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states

The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations presented here suggest that silicon vacancy (VSi) related point defects in SiC possess properties the similar to those of the NV center in diamond, which in turn make them a promising quantum system for single-defect and single-photon spectroscopy in the infrared region. Depending on the defect type, temperature, SiC polytype, and crystalline position, two opposite schemes have been observed for the optical alignment of the ground state spin sublevels population of the VSi-related defects upon irradiation with unpolarized light. Spin ensemble of VSi-related defects are shown to be prepared in a coherent superposition of the spin states even at room temperature. Zero-field ODMR shows the possibility to manipulate of the ground state spin population by applying radiofrequency field. These altogether make VSi-related defects in SiC very favorable candidate for spintronics, quantum information processing, and magnetometry.

Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.

Local control of spin flow in weak magnetic fields

We demonstrate that optical illumination strongly influences spin transport in n-type GaAs. Specifically, increasing the power density of optical spin pumping results in a significant expansion of the spin diffusion profile. A further means of manipulation is the application of a weak transverse magnetic field, which strongly increases spin flow out of the excitation spot. These effects are directly monitored in spin imaging experiments and spatially resolved Hanle measurements.

Non-thermal photocoercivity effect in a ferromagnetic semiconductor

We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

Suppression of electron spin relaxation in Mn-doped GaAs

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.

Bound magnetic polarons in the very dilute regime

We study bound magnetic polarons (BMP) in a very diluted magnetic semiconductor CdMnTe by means of site selective spectroscopy. In zero magnetic field we detect a broad and asymmetric band with a characteristic spectral width of about 5 meV. When external magnetic fields are applied a new line appears in the emission spectrum. Remarkably, the spectral width of this line is reduced greatly down to 0.24 meV. We attribute such unusual behavior to the formation of BMP, effected by sizable fluctuations of local magnetic moments. The modifications of the optical spectra have been simulated by the Monte-Carlo method and calculated within an approach considering the nearest Mn ion. A quantitative agreement with the experiment is achieved without use of fitting parameters. It is demonstrated that the low-energy part of the emission spectra originates from the energetic relaxation of a complex consisting of a hole and its nearest Mn ion. It is also shown that the contribution to the narrow line arises from the remote Mn ions.