The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in t
he zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential hindrance for quantum computing architectures that can be charge-sensitive during certain operations. Here we examine phonon generation in a GaAs double dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analog of the Raman effect, stimulated phonon emission is shown to produce population inversion of a two-level system and provides spectroscopic signatures of the phononic environment created by the nanoscale device geometry.
We report the development and performance of on-chip interconnects designed to suppress electromagnetic (EM) crosstalk in spin qubit device architectures with the large number of gate electrodes needed for multi- qubit operation. Our design improves
the performance of typical device interconnects via the use of minia- turised ohmic contacts and interspersed ground guards. Low temperature measurements and numerical simulation confirm that control and readout signal crosstalk can be suppressed to levels of order 1%, from dc to 1 GHz.
