Based on first-principles calculations, we predict that the magnetic anisotropy energy (MAE) of Co-doped TiO$_2$ sensitively depends on carrier accumulation. This magnetoelectric phenomenon provides a promising route to directly manipulate the magnet
ization direction of diluted magnetic semiconductor by external electric-fields. We calculate the band structures and reveal the origin of carrier-dependent MAE in k-space. In fact, the carrier accumulation shifts the Fermi energy and regulates the competing contributions to MAE. The first-principles calculations provide a straightforward way to design spintronics materials with electrically controllable spin direction.
The local magnetic moment of Ti:ZnO is calculated from first principles by using the corrected-band-gap scheme (CBGS). The results shows that the system is magnetic with the magnetization of 0.699 $mu_B$ per dopant. The origin of the local magnetic m
oment is considered to be the impurity band partially occupied by the donor electrons in the conduction band. Further, the impacts of applying Hubbard U to Ti-d orbital on the magnetic moment have been investigated.
Based on first-principles calculation, it has been predicted that the magnetic anisotropy energy (MAE) in Co-doped ZnO (Co:ZnO) depends on electron-filling. Results show that the charge neutral Co:ZnO presents a easy plane magnetic state. While modif
ying the total number of electrons, the easy axis rotates from in-plane to out-of-plane. The alternation of the MAE is considered to be the change of the ground state of Co ion, resulting from the relocating of electrons on Co d-orbitals with electron-filling.
