We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by textit{in-situ} Hall-effect measurements. For a given number of
defects, we find that the intensities of the D and D peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level
Graphenes high mobility and Fermi velocity, combined with its constant light absorption in the visible to far-infrared range, make it an ideal material to fabricate high-speed and ultra-broadband photodetectors. However, the precise mechanism of phot
odetection is still debated. Here, we report wavelength and polarization dependent measurements of metal-graphene-metal photodetectors. This allows us to quantify and control the relative contributions of both photo-thermo- and photoelectric effects, both contributing to the overall photoresponse. This paves the way for a more efficient photodetector design for ultra-fast operating speeds.
We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they a
ll involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.
We report a 2mu m ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequenc
y of 110MHz. This is a convenient high-power transform-limited laser at 2mu m for various applications, such as laser surgery and material processing.
Graphene is at the center of a significant research effort. Near-ballistic transport at room temperature and high mobility make it a potential material for nanoelectronics. Its electronic and mechanical properties are also ideal for micro and nanomec
hanical systems, thin-film transistors and transparent and conductive composites and electrodes. Here we exploit the optoelectronic properties of graphene to realize an ultrafast laser. A graphene-polymer composite is fabricated using wet-chemistry techniques. Pauli blocking following intense illumination results in saturable absorption, independent of wavelength. This is used to passively mode-lock an Erbium-doped fibre laser working at 1559nm, with a 5.24nm spectral bandwidth and ~460fs pulse duration, paving the way to graphene-based photonics.
Graphene edges are of particular interest, since their chirality determines the electronic properties. Here we present a detailed Raman investigation of graphene flakes with well defined edges oriented at different crystallographic directions. The po
sition, width and intensity of G and D peaks at the edges are studied as a function of the incident light polarization. The D-band is strongest for light polarized parallel to the edge and minimum for perpendicular orientation. Raman mapping shows that the D peak is localized in proximity of the edge. The D to G ratio does not always show a significant dependence on edge orientation. Thus, even though edges can appear macroscopically smooth and oriented at well defined angles, they are not necessarily microscopically ordered.
