Resistance as a function of temperature down to 20mK and magnetic fields up to 18T for various carrier concentrations is measured for nanowires made from the SrTiO3/LaAlO3 interface using a hard mask shadow deposition technique. The narrow width of t
he wires (of the order of 50nm) allows us to separate out the magnetic effects from the dominant superconducting ones at low magnetic fields. At this regime hysteresis loops are observed along with the superconducting transition. From our data analysis we find that the magnetic order probed by the giant magnetoresistance (GMR) effect vanishes at TCurie = 954 mK. This order is not a simple ferromagnetic state but consists of domains with opposite magnetization having a preferred in-plane orientation.
We grow a tiled structure of insulating two dimensional LaAlO3/SrTiO3 interfaces composed of alternating one and three LaAlO3 unit cells. The boundary between two tiles is conducting. At low temperatures this conductance exhibits quantized steps as a
function of gate voltage indicative of a one dimensional channel. The step size of half the quantum of conductance is an evidence for absence of spin degeneracy.
