Quantum spin liquids (QSLs) are an exotic state of matter that is subject to extensive research. However, the relationship between the ubiquitous disorder and the QSL behaviors is still unclear. Here, by performing comparative experimental studies on
two kagom{e}-lattice QSL candidates, Tm$_3$Sb$_3$Zn$_2$O$_{14}$ and Tm$_3$Sb$_3$Mg$_2$O$_{14}$, which are isostructural to each other but with strong and weak structural disorder, respectively, we show unambiguously that the disorder can induce spin-liquid-like features. In particular, both compounds show dominant antiferromagnetic interactions with a Curie-Weiss temperature of -17.4 and -28.7 K for Tm$_3$Sb$_3$Zn$_2$O$_{14}$ and Tm$_3$Sb$_3$Mg$_2$O$_{14}$, respectively, but remain disordered down to about 0.05 K. Specific heat results suggest the presence of gapless magnetic excitations characterized by a residual linear term. Magnetic excitation spectra obtained by inelastic neutron scattering (INS) at low temperatures display broad continua. All these observations are consistent with those of a QSL. However, we find in Tm$_3$Sb$_3$Zn$_2$O$_{14}$ which has strong disorder resulting from the random mixing of the magnetic Tm$^{3+}$ and nonmagnetic Zn$^{2+}$, that the low-energy magnetic excitations observed in the specific heat and INS measurements are substantially enhanced, compared to those of Tm$_3$Sb$_3$Mg$_2$O$_{14}$ which has much less disorder. We believe that the effective spins of the Tm$^{3+}$ ions in the Zn$^{2+}$/Mg$^{2+}$ sites give rise to the low-energy magnetic excitations, and the amount of the random occupancy determines the excitation strength. These results provide direct evidence of the mimicry of a QSL caused by disorder.
The Berezinskii-Kosterlitz-Thouless (BKT) mechanism, building upon proliferation of topological defects in 2D systems, is the first example of phase transition beyond the Landau-Ginzburg paradigm of symmetry breaking. Such a topological phase transit
ion has long been sought yet undiscovered directly in magnetic materials. Here, we pin down two transitions that bound a BKT phase in an ideal 2D frustrated magnet TmMgGaO$_4$, via nuclear magnetic resonance under in-plane magnetic fields, which do not disturb the low-energy electronic states and allow BKT fluctuations to be detected sensitively. Moreover, by applying out-of-plane fields, we find a critical scaling behaviour of the magnetic susceptibility expected for the BKT transition. The experimental findings can be explained by quantum Monte Carlo simulations applied on an accurate triangular-lattice Ising model of the compound which hosts a BKT phase. These results provide a concrete example for the BKT phase and offer an ideal platform for future investigations on the BKT physics in magnetic materials.
We study the electronic structures and topological properties of $(M+N)$-layer twisted graphene systems. We consider the generic situation that $N$-layer graphene is placed on top of the other $M$-layer graphene, and is twisted with respect to each o
ther by an angle $theta$. In such twisted multilayer graphene (TMG) systems, we find that there exists two low-energy flat bands for each valley emerging from the interface between the $M$ layers and the $N$ layers. These two low-energy bands in the TMG system possess valley Chern numbers that are dependent on both the number of layers and the stacking chiralities. In particular, when the stacking chiralities of the $M$ layers and $N$ layers are opposite, the total Chern number of the two low-energy bands for each valley equals to $pm(M+N-2)$ (per spin). If the stacking chiralities of the $M$ layers and the $N$ layers are the same, then the total Chern number of the two low-energy bands for each valley is $pm(M-N)$ (per spin). The valley Chern numbers of the low-energy bands are associated with large, valley-contrasting orbital magnetizations, suggesting the possible existence of orbital ferromagnetism and anomalous Hall effect once the valley degeneracy is lifted either externally by a weak magnetic field or internally by Coulomb interaction through spontaneous symmetry breaking.
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addre
ssing both electrical and optical device rules. However the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits scaling density. Furthermore, modulators bear a fundamental a frequency-response to energy-sensitive trade-off, a limitation that can be overcome with coupling-based modulators where the temporal response speed is decoupled from the optical cavity photo lifetime. Thus, the coupling effect to the resonator is modulated rather then tuning the index of the resonator itself. However, the weak electro-optic response of silicon limits such coupling modulator performance, since the micrometer-short overlap region of the waveguide-bus and a microring resonator is insufficient to induce signal modulation. To address these limitations, here we demonstrate a coupling-controlled electro-optic modulator by heterogeneously integrating a dual-gated indium-tin-oxide (ITO) phase shifter placed at the silicon microring-bus coupler region. Our experimental modulator shows about 4 dB extinction ratio on resonance, and a about 1.5 dB off resonance with a low insertion loss of 0.15 dB for a just 4 {mu}m short device demonstrating a compact high 10:1 modulation-to-loss ratio. In conclusion we demonstrate a coupling modulator using strongly index-changeable materials enabling compact and high-performing modulators using semiconductor foundry-near materials.
Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components usually result
s in a weak light-graphene interaction leading to large device lengths limiting electro-optic performance. In contrast, here we demonstrate a plasmonic slot graphene photodetector on silicon-on-insulator platform with high-responsivity given the 5 um-short device length. We observe that the maximum photocurrent, and hence the highest responsivity, scales inversely with the slot gap width. Using a dual-lithography step, we realize 15 nm narrow slots that show a 15-times higher responsivity per unit device-length compared to photonic graphene photodetectors. Furthermore, we reveal that the back-gated electrostatics is overshadowed by channel-doping contributions induced by the contacts of this ultra-short channel graphene photodetector. This leads to quasi charge neutrality, which explains both the previously-unseen offset between the maximum photovoltaic-based photocurrent relative to graphenes Dirac point and the observed non-ambipolar transport. Such micrometer compact and absorption-efficient photodetectors allow for short-carrier pathways in next-generation photonic components, while being an ideal testbed to study short-channel carrier physics in graphene optoelectronics.
We report on comprehensive results identifying the ground state of a triangular-lattice structured YbZnGaO$_4$ to be spin glass, including no long-range magnetic order, prominent broad excitation continua, and absence of magnetic thermal conductivity
. More crucially, from the ultralow-temperature a.c. susceptibility measurements, we unambiguously observe frequency-dependent peaks around 0.1 K, indicating the spin-glass ground state. We suggest this conclusion to hold also for its sister compound YbMgGaO$_4$, which is confirmed by the observation of spin freezing at low temperatures. We consider disorder and frustration to be the main driving force for the spin-glass phase.
Monolayer transition metal dichalcogenides are uniquely-qualified materials for photonics because they combine well defined tunable direct band gaps and selfpassivated surfaces without dangling bonds. However, the atomic thickness of these 2D materia
ls results in low photo absorption limiting the achievable photo luminescence intensity. Such emission can, in principle, be enhanced via nanoscale antennae resulting in; a. an increased absorption cross-section enhancing pump efficiency, b. an acceleration of the internal emission rate via the Purcell factor mainly by reducing the antennas optical mode volume beyond the diffraction limit, and c. improved impedance matching of the emitter dipole to the freespace wavelength. Plasmonic dimer antennae show orders of magnitude hot-spot field enhancements when an emitter is positioned exactly at the midgap. However, a 2D material cannot be grown, or easily transferred, to reside in mid-gap of the metallic dimer cavity. In addition, a spacer layer between the cavity and the emissive material is required to avoid non-radiative recombination channels. Using both computational and experimental methods, in this work we show that the emission enhancement from a 2D emitter- monomer antenna cavity system rivals that of dimers at much reduced lithographic effort. We rationalize this finding by showing that the emission enhancement in dimer antennae does not specifically originate from the gap of the dimer cavity, but is an average effect originating from the effective cavity crosssection taken below each optical cavity where the emitting 2D film is located. In particular, we test an array of different dimer and monomer antenna geometries and observe a representative 3x higher emission for both monomer and dimer cavities as compared to intrinsic emission of Chemical Vapor Deposition synthesized WS2 flakes.
In this paper, three different materials Si, ITO and graphene; and three different types of mode structures bulk, slot and hybrid; based on their electrooptical and electro absorptive aspects in performance are analyzed. The study focuses on three ma
jor characteristics of electrooptic tuning, i.e. material, modal and cavity dependency. The materials are characterized with established models and the allowed ranges for their key parameter spectra are analyzed with desired tuning in mind; categorizing into n and k dominant regions for plausible electrooptic and electro absorptive applications, respectively. A semi analytic approach, with the aid of FEM simulations for the eigenmode calculations, was used for this work. Electrooptic tuning i.e. resonance shift properties inside Fabry Perot cavities are investigated with modal and scaling concerns in mind. Tuning changes the effective complex refractive index of the mode dictated by the Kramers Kronig relations which subsequently suggest a tradeoff between the resonance shift and increasing losses. The electrical tuning properties of the different modes in the cavity are analyzed, and subsequently a figure of merit, delta-lambda/delta-alpha was chosen with respect to carrier concentration and cavity scaling to find prospective suitable regions for desired tuning effects.
