Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), where
as STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ~ 92 {mu}C/cm2 and 2EC ~ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.
The entanglement characteristics including the so-called sudden death effect between two identical two-level atoms trapped in two separate cavities connected by an optical fiber are studied. The results show that the time evolution of entanglement is
sensitive not only to the degree of entanglement of the initial state but also to the ratio between cavity-fiber coupling () and atom-cavity coupling (). This means that the entanglement dynamics can be controlled by choosing specific v and g.
